5秒后页面跳转
MMBFJ112 PDF预览

MMBFJ112

更新时间: 2024-11-27 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关PC光电二极管小信号场效应晶体管
页数 文件大小 规格书
5页 85K
描述
N 沟道开关

MMBFJ112 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:42 weeks风险等级:0.86
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:1049654Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236)Samacsys Released Date:2018-02-22 15:31:56
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:50 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBFJ112 数据手册

 浏览型号MMBFJ112的Datasheet PDF文件第2页浏览型号MMBFJ112的Datasheet PDF文件第3页浏览型号MMBFJ112的Datasheet PDF文件第4页浏览型号MMBFJ112的Datasheet PDF文件第5页 
J111, J112  
JFET Chopper Transistors  
N−Channel — Depletion  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
1 DRAIN  
MAXIMUM RATINGS  
Rating  
DrainGate Voltage  
Symbol  
Value  
Unit  
3
GATE  
V
−35  
Vdc  
DG  
GateSource Voltage  
Gate Current  
V
−35  
50  
Vdc  
GS  
I
mAdc  
G
2 SOURCE  
Total Device Dissipation @ T = 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
Derate above = 25°C  
Lead Temperature  
T
300  
°C  
°C  
L
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−92  
CASE 29−11  
STYLE 5  
1
2
3
MARKING DIAGRAM  
J11x  
AYWW G  
G
J11x = Device Code  
x = 1 or 2  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
J111/D  

与MMBFJ112相关器件

型号 品牌 获取价格 描述 数据表
MMBFJ112_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,
MMBFJ112_SB51338 FAIRCHILD

获取价格

SMALL SIGNAL, FET
MMBFJ112D87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,
MMBFJ112L99Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ112S62Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ113 FAIRCHILD

获取价格

N-Channel Switch
MMBFJ113 ONSEMI

获取价格

N 沟道开关
MMBFJ113_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,
MMBFJ113D87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,
MMBFJ113S62Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET