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MMBFJ108 PDF预览

MMBFJ108

更新时间: 2024-11-27 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关PC光电二极管晶体管
页数 文件大小 规格书
9页 441K
描述
N 沟道开关

MMBFJ108 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:24 weeks风险等级:0.95
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:998218Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 CASE 527AG-01 ISSUE OSamacsys Released Date:2017-11-29 09:52:00
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:8 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):15 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBFJ108 数据手册

 浏览型号MMBFJ108的Datasheet PDF文件第2页浏览型号MMBFJ108的Datasheet PDF文件第3页浏览型号MMBFJ108的Datasheet PDF文件第4页浏览型号MMBFJ108的Datasheet PDF文件第5页浏览型号MMBFJ108的Datasheet PDF文件第6页浏览型号MMBFJ108的Datasheet PDF文件第7页 
N-Channel JFET  
J109, MMBFJ108  
Features  
This Device is Designed for Digital Switching Applications where  
Very Low On Resistance is Mandatory  
Sourced from Process 58  
www.onsemi.com  
These are PbFree Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise specified) (Notes 1, 2)  
A
Symbol  
Parameter  
DrainGate Voltage  
Value  
25  
Unit  
V
V
V
DG  
GS  
GF  
GateSource Voltage  
25  
V
1
I
Forward Gate Current  
10  
mA  
°C  
TO92 3 4.825x4.76  
T , T  
Operating and Storage Junction  
Temperature Range  
55 to 150  
J
STG  
CASE 135AN  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steadystate limits. ON Semiconductor should be consulted on  
applications involving pulsed or lowdutycycle operations.  
1
THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
TO92 3 4.83x4.76  
LEADFORMED  
CASE 135AR  
Max  
J109  
(Note 3)  
MMBFJ108  
(Note 4)  
Symbol  
Parameter  
Unit  
mW  
P
D
Total Device Dissipation  
Derate Above 25°C  
625  
5.0  
350  
2.8  
3
mW/°C  
°C/W  
1
R
Thermal Resistance,  
JunctiontoCase  
125  
q
JC  
JA  
2
SOT23/SUPERSOTt23,  
R
Thermal Resistance,  
JunctiontoAmbient  
200  
357  
°C/W  
q
3 LEAD, 1.4x2.9  
CASE 527AG  
3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
with minimum land pattern size.  
1. Drain, 2. Source, 3. Gate  
4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for  
2
the collector lead minimum 6 cm .  
MARKING DIAGRAM  
$Y&Z&3&K  
J109  
$Y&Z&3  
J109  
&Y  
I8 &G  
J109  
J109D26Z  
MMBFJ108  
J109, I8 = Specific Device Code  
$Y  
&Y  
&G  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Year Coding  
= Weekly Date Code  
= Assembly Plant Code  
= Date Code Format  
= Lot Run Traceability Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
December, 2020 Rev. 4  
J109/D  
 

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