J108/J109/J110/MMBFJ108
N-Channel Switch
3
•
This device is designed for digital switching
applications where very low on resistance is
mandatory.
Sourced from Process 58.
2
•
TO-92
1. Drain 2. Source 3. Gate
1
SuperSOT-3
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * T =25°C unless otherwise noted
A
Symbol
Parameter
Value
25
Units
V
V
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
DG
GS
-25
V
I
10
mA
°C
GF
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristics
V
Gate-Source Breakdwon Voltage
Gate Reverse Current
I
= -10µA, V = 0
-25
V
(BR)GSS
GSS
G
DS
I
V
V
= -15V, V = 0
-3.0
-200
nA
nA
GS
GS
DS
= -15V, V = 0, T = 100°C
DS
A
V
(off)
Gate-Source Cutoff Voltage
V
= 15V, I = 10nA
108
109
110
-3.0
-2.0
-0.5
-10
-6.0
-4.0
V
V
V
GS
DS
D
On Characteristics
I
Zero-Gate Voltage Drain Current *
V
V
= 15V, I = 0
108
109
110
80
40
10
mA
mA
mA
DSS
DS
DS
GS
r
(on)
Drain-Source On Resistance
≤ 0.1V, V = 0
108
109
110
8.0
12
18
Ω
Ω
Ω
DS
GS
Small Signal Characteristics
C
C
(on)
Drain Gate & Source Gate On
Capacitance
V
= 0, V = 0, f = 1.0MHz
85
pF
dg
DS
GS
(off)
sg
dg
C
C
(on)
(off)
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
V
= 0, V = -10, f = 1.0MHz
15
15
pF
pF
DS
DS
GS
= 0, V = -10, f = 1.0MHz
sg
GS
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002