Datasheet > MMBFJ109

MMBFJ109

更新时间： 2024-11-25 22:27:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关
页数	文件大小	规格书
7页	162K
描述
N-Channel Switch

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中文翻译

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数据手册

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MMBFJ109 数据手册

J108/J109/J110/MMBFJ108

N-Channel Switch

•

This device is designed for digital switching

applications where very low on resistance is

mandatory.

Sourced from Process 58.

•

TO-92

1. Drain 2. Source 3. Gate

SuperSOT-3

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-25

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

stg

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristics

Gate-Source Breakdwon Voltage

Gate Reverse Current

= -10µA, V = 0

-25

(BR)GSS

GSS

= -15V, V = 0

-3.0

-200

= -15V, V = 0, T = 100°C

(off)

Gate-Source Cutoff Voltage

= 15V, I = 10nA

108

109

110

-3.0

-2.0

-0.5

-10

-6.0

-4.0

On Characteristics

Zero-Gate Voltage Drain Current *

= 15V, I = 0

108

109

110

DSS

(on)

Drain-Source On Resistance

≤ 0.1V, V = 0

108

109

110

8.0

Ω

Small Signal Characteristics

(on)

Drain Gate & Source Gate On

Capacitance

= 0, V = 0, f = 1.0MHz

(off)

(on)

(off)

Drain-Gate Off Capacitance

Source-Gate Off Capacitance

= 0, V = -10, f = 1.0MHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Rev. B, July 2002

12 3 4 5 6 7

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