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MMBF5484LT1G PDF预览

MMBF5484LT1G

更新时间: 2024-02-14 12:06:34
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
6页 149K
描述
JFET Transistor N−Channel

MMBF5484LT1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:LEAD FREE, CASE 318-08, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.66
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1 pF
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最小功率增益 (Gp):16 dB
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MMBF5484LT1G 数据手册

 浏览型号MMBF5484LT1G的Datasheet PDF文件第2页浏览型号MMBF5484LT1G的Datasheet PDF文件第3页浏览型号MMBF5484LT1G的Datasheet PDF文件第4页浏览型号MMBF5484LT1G的Datasheet PDF文件第5页浏览型号MMBF5484LT1G的Datasheet PDF文件第6页 
MMBF5484LT1  
Preferred Device  
JFET Transistor  
N−Channel  
Features  
Pb−Free Package is Available  
http://onsemi.com  
MAXIMUM RATINGS  
2 SOURCE  
Rating  
Symbol  
Value  
Unit  
Drain−Gate Voltage  
V
25  
Vdc  
DG  
3
GATE  
Reverse Gate−Source Voltage  
Forward Gate Current  
V
25  
10  
Vdc  
GS(r)  
I
mAdc  
G(f)  
Continuous Device Dissipation at or Below  
P
D
1 DRAIN  
T
= 25°C  
200  
2.8  
mW  
mW/°C  
C
Linear Derating Factor  
Storage Channel Temperature Range  
THERMAL CHARACTERISTICS  
T
−65 to +150  
°C  
stg  
3
SOT−23 (TO−236)  
CASE 318  
1
Characteristic  
Symbol  
Max  
Unit  
STYLE 10  
2
Total Device Dissipation FR−5 Board,  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
556  
°C/W  
°C  
q
JA  
MARKING DIAGRAM  
T , T  
J
−55 to +150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
M6B M G  
G
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
1
M6B = Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF5484LT1  
SOT−23 3,000 / Tape & Reel  
MMBF5484LT1G SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MMBF5484LT1/D  
 

MMBF5484LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF5459 ONSEMI

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