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MMBF5484-S00Z PDF预览

MMBF5484-S00Z

更新时间: 2024-11-27 09:12:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
14页 754K
描述
Transistor

MMBF5484-S00Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92FET 技术:JUNCTION
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MMBF5484-S00Z 数据手册

 浏览型号MMBF5484-S00Z的Datasheet PDF文件第2页浏览型号MMBF5484-S00Z的Datasheet PDF文件第3页浏览型号MMBF5484-S00Z的Datasheet PDF文件第4页浏览型号MMBF5484-S00Z的Datasheet PDF文件第5页浏览型号MMBF5484-S00Z的Datasheet PDF文件第6页浏览型号MMBF5484-S00Z的Datasheet PDF文件第7页 
MMBF5484  
MMBF5485  
MMBF5486  
2N5484  
2N5485  
2N5486  
G
S
TO-92  
G
S
SOT-23  
Mark: 6B / 6M / 6H  
D
D
NOTE: Source & Drain  
are interchangeable  
N-Channel RF Amplifier  
This device is designed primarily for electronic switching  
applications such as low On Resistance analog switching.  
Sourced from Process 50.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
25  
- 25  
10  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5484-5486  
*MMBF5484-5486  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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