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MMBF5458 PDF预览

MMBF5458

更新时间: 2024-11-03 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 放大器开关光电二极管晶体管
页数 文件大小 规格书
7页 242K
描述
N 沟道通用放大器

MMBF5458 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.55Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):3 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF5458 数据手册

 浏览型号MMBF5458的Datasheet PDF文件第2页浏览型号MMBF5458的Datasheet PDF文件第3页浏览型号MMBF5458的Datasheet PDF文件第4页浏览型号MMBF5458的Datasheet PDF文件第5页浏览型号MMBF5458的Datasheet PDF文件第6页浏览型号MMBF5458的Datasheet PDF文件第7页 
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MMBF5458 替代型号

型号 品牌 替代类型 描述 数据表
MMBFU310LT1G ONSEMI

类似代替

JFET Transistor N-Channel
MMBFJ310LT1G ONSEMI

类似代替

JFET - VHF/UHF Amplifier Transistor N-Channel
MMBFJ309LT1G ONSEMI

类似代替

JFET - VHF/UHF Amplifier Transistor N-Channel

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