是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.1 | 配置: | SINGLE |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 2 pF |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 0.225 W | 最大功率耗散 (Abs): | 0.225 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBF5460LT1G | ONSEMI |
类似代替 |
JFET - General Purpose Transistor P-Channel | |
MMBF5460LT1 | ONSEMI |
类似代替 |
JFET General Purpose Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBF5460D87Z | TI |
获取价格 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5460D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23, | |
MMBF5460L | MOTOROLA |
获取价格 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-07, 3 PIN | |
MMBF5460L99Z | TI |
获取价格 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5460L99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
MMBF5460LT1 | ONSEMI |
获取价格 |
JFET General Purpose Transistor | |
MMBF5460LT1_06 | ONSEMI |
获取价格 |
JFET - General Purpose Transistor P-Channel | |
MMBF5460LT1G | ONSEMI |
获取价格 |
JFET - General Purpose Transistor P-Channel | |
MMBF5460S62Z | TI |
获取价格 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5461 | FAIRCHILD |
获取价格 |
P-Channel General Purpose Amplifier |