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MMBF5484LT1 PDF预览

MMBF5484LT1

更新时间: 2024-11-25 22:16:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
10页 298K
描述
JFET Transistor

MMBF5484LT1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:5.36配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1 pF
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.2 W
最大功率耗散 (Abs):0.225 W最小功率增益 (Gp):16 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MMBF5484LT1 数据手册

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Order this document  
by MMBF5484LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel  
2 SOURCE  
Motorola Preferred Device  
3
GATE  
1 DRAIN  
3
MAXIMUM RATINGS  
Rating  
Drain–Gate Voltage  
Symbol  
Value  
Unit  
Vdc  
1
2
V
DG  
25  
25  
10  
Reverse Gate–Source Voltage  
Forward Gate Current  
V
GS(r)  
Vdc  
CASE 31808, STYLE 10  
SOT23 (TO236AB)  
I
mAdc  
G(f)  
Continuous Device Dissipation at or Below  
P
D
T
C
= 25°C  
200  
2.8  
mW  
mW/°C  
Linear Derating Factor  
Storage Channel Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
65 to +150  
°C  
stg  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBF5484LT1 = 6B  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Gate–Source Breakdown Voltage  
V
25  
Vdc  
(BR)GSS  
(I = –1.0 µAdc, V  
= 0)  
G
DS  
Gate Reverse Current  
I
GSS  
(V  
GS  
(V  
GS  
= 20 Vdc, V  
= 20 Vdc, V  
= 0)  
1.0  
0.2  
nAdc  
µAdc  
DS  
DS  
= 0, T = 100°C)  
A
Gate Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
0.3  
3.0  
Vdc  
GS(off)  
DS  
D
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
1.0  
5.0  
mAdc  
DSS  
(V  
DS  
= 15 Vdc, V  
= 0)  
GS  
SMALLSIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
|Y  
|
3000  
6000  
50  
µmhos  
µmhos  
fs  
(V  
DS  
= 15 Vdc, V  
= 0, f = 1.0 kHz)  
GS  
Output Admittance  
(V = 15 Vdc, V  
|y  
|
os  
= 0, f = 1.0 kHz)  
DS  
1. FR5 = 1.0  
GS  
0.75 0.062 in.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

MMBF5484LT1 替代型号

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