Datasheet > MMBF5484LT1_06

MMBF5484LT1_06

更新时间： 2024-02-18 17:16:08

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	149K
描述
JFET Transistor N−Channel

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数据手册

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MMBF5484LT1_06 数据手册

MMBF5484LT1

Preferred Device

JFET Transistor

N−Channel

Features

• Pb−Free Package is Available

http://onsemi.com

MAXIMUM RATINGS

2 SOURCE

Rating

Symbol

Value

Unit

Drain−Gate Voltage

Vdc

GATE

Reverse Gate−Source Voltage

Forward Gate Current

Vdc

GS(r)

mAdc

G(f)

Continuous Device Dissipation at or Below

1 DRAIN

= 25°C

200

2.8

mW/°C

Linear Derating Factor

Storage Channel Temperature Range

THERMAL CHARACTERISTICS

−65 to +150

°C

stg

SOT−23 (TO−236)

CASE 318

Characteristic

Symbol

Max

Unit

STYLE 10

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

MARKING DIAGRAM

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

M6B M G

1. FR−5 = 1.0 x 0.75 x 0.062 in.

M6B = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBF5484LT1

SOT−23 3,000 / Tape & Reel

MMBF5484LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 3

MMBF5484LT1/D

12 3 4 5 6

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