Datasheet > MMBF5461S62Z

MMBF5461S62Z

更新时间： 2024-02-20 01:25:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	114K
描述
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET

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技术参数
数据手册

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MMBF5461S62Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.64
配置：	SINGLE	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	2 pF	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MMBF5461S62Z 数据手册

MMBF5460

MMBF5461

MMBF5462

2N5460

2N5461

2N5462

TO-92

SOT-23

Mark: 6E / 61U / 61V

NOTE: Source & Drain

are interchangeable

P-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources. Sourced

from Process 89.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

- 40

V_GS

I_GF

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5460-5462

*MMBF5460-5462

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2N5460/5461/5462/MMBF5460/5461/5462, Rev A

2001 Fairchild Semiconductor Corporation

12 3 4 5

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