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MMBF0201NLT1G PDF预览

MMBF0201NLT1G

更新时间： 2024-09-27 03:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 62K
描述
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23

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中文翻译

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MMBF0201NLT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT-23包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：10 weeks风险等级：0.6
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：0.3 A最大漏极电流 (ID)：0.3 A
最大漏源导通电阻：1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.225 W
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMBF0201NLT1G 数据手册

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MMBF0201NLT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
N−Channel SOT−23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
http://onsemi.com  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc−dc converters, power management in portable and  
battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
300 mAMPS − 20 VOLTS  
RDS(on) = 1 W  
N−Channel  
Features  
3
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
• Miniature SOT−23 Surface Mount Package Saves Board Space  
• Pb−Free Package is Available  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
2
DSS  
V
20  
Vdc  
GS  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
mAdc  
− Continuous @ T = 25°C  
I
I
300  
240  
750  
A
D
D
− Continuous @ T = 70°C  
A
3
3
− Pulsed Drain Current (t ≤ 10 ms)  
I
p
DM  
Drain  
Total Power Dissipation @ T = 25°C  
P
225  
− 55 to 150  
556  
mW  
°C  
A
D
1
Operating and Storage Temperature Range  
Thermal Resistance, Junction−to−Ambient  
T , T  
J
N1 M G  
stg  
2
G
R
q
°C/W  
°C  
JA  
SOT−23  
CASE 318  
STYLE 21  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
1
2
L
Gate  
Source  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
N1  
M
G
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MMBF0201NLT1  
SOT−23 3000 Tape & Reel  
MMBF0201NLT1G  
SOT−23 3000 Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MMBF0201NLT1/D  
12345

中文翻译

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MMBF0201NLT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF0201NLT1 ONSEMI

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