Datasheet > MMBF170

MMBF170

更新时间： 2024-02-17 23:12:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	227K
描述
SOT-23

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中文翻译

获取价格

技术参数
数据手册

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MMBF170 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	配置：	Single
最大漏极电流 (Abs) (ID)：	0.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.55 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

MMBF170 数据手册

SMD Type

Product specification

MMBF170

Features

Low On-Resistance

SOT-23

Low Gate Threshold Voltage

Low Input Capacitance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Fast Switching Speed

Low Input/Output Leakage

Lead Free/RoHS Compliant (Note 2)

TOP VIEW

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Drain

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Gate

Marking: (See Page 2) K6Z

All Dimensions in mm

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

Source

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

MMBF170

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

I_D

500

800

Drain Current (Note 1)

Continuous

Pulsed

300

1.80

mW/°C

P_d

Total Power Dissipation (Note 1)

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

K/W

T_j, T_STG

-55 to +150

°C

Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

2. No purposefully added lead.

1 of 2

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4008-318-123

中文翻译

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