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MMBF0201NLT1 PDF预览

MMBF0201NLT1

更新时间: 2024-01-12 03:23:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
8页 89K
描述
Power MOSFET 300 mAmps, 20 Volts

MMBF0201NLT1 数据手册

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MMBF0201NLT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
N–Channel SOT–23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc–dc converters, power management in portable and  
battery–powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
300 mAMPS  
20 VOLTS  
Low R  
DS(on)  
Provides Higher Efficiency and Extends Battery Life  
R
= 1 W  
DS(on)  
Miniature SOT–23 Surface Mount Package Saves Board Space  
N–Channel  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
DSS  
V
GS  
± 20  
Vdc  
1
mAdc  
– Continuous @ T = 25°C  
I
I
300  
240  
750  
A
D
D
– Continuous @ T = 70°C  
A
I
– Pulsed Drain Current (t 10 µs)  
DM  
p
2
(1)  
Total Power Dissipation @ T = 25°C  
P
D
225  
mW  
A
MARKING  
DIAGRAM  
Operating and Storage Temperature  
Range  
T , T  
– 55 to  
150  
°C  
J
stg  
Thermal Resistance – Junction–to–Ambient  
R
556  
260  
°C/W  
°C  
θJA  
3
SOT–23  
CASE 318  
STYLE 21  
N1  
W
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10  
seconds  
T
L
1
2
W
= Work Week  
PIN ASSIGNMENT  
Drain  
3
1
Gate  
2
Source  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF0201NLT1  
SOT–23 3000 Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
MMBF0201NLT1/D  

MMBF0201NLT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBF0201NLT1G ONSEMI

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Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23

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