是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | CASE 318-08, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.18 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 0.3 A |
最大漏极电流 (ID): | 0.3 A | 最大漏源导通电阻: | 1.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.225 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTR0202PLT3G | ONSEMI |
功能相似 |
Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package | |
NTR0202PLT1G | ONSEMI |
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Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package | |
NTR0202PLT1 | ONSEMI |
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Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBF0202PLT1G | ONSEMI |
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MMBF170 | FAIRCHILD |
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MMBF170 | TYSEMI |
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SOT-23 | |
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MMBF170 | TI |
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500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |