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MMBF0202PLT1 PDF预览

MMBF0202PLT1

更新时间: 2024-09-27 21:53:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 92K
描述
Power MOSFET 300 mAmps, 20 Volts

MMBF0202PLT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.18配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:1.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBF0202PLT1 数据手册

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MMBF0202PLT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
P–Channel SOT–23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc–dc converters, power management in portable and  
battery–powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
300 mAMPS  
20 VOLTS  
Low R  
DS(on)  
Provides Higher Efficiency and Extends Battery Life  
R
= 1.4 W  
DS(on)  
Miniature SOT–23 Surface Mount Package Saves Board Space  
P–Channel  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
DSS  
V
GS  
± 20  
Vdc  
1
mAdc  
– Continuous @ T = 25°C  
I
I
300  
240  
750  
A
D
D
– Continuous @ T = 70°C  
A
I
– Pulsed Drain Current (t 10 µs)  
DM  
p
2
Total Power Dissipation @ T = 25°C  
(Note 1.)  
P
D
225  
mW  
A
MARKING  
DIAGRAM  
Operating and Storage Temperature  
Range  
T , T  
– 55 to  
150  
°C  
J
stg  
3
Thermal Resistance – Junction–to–Ambient  
R
625  
260  
°C/W  
°C  
θJA  
SOT–23  
CASE 318  
STYLE 21  
P3  
W
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10  
seconds  
T
L
1
2
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.  
W
= Work Week  
PIN ASSIGNMENT  
Drain  
3
1
Gate  
2
Source  
ORDERING INFORMATION  
Device  
Package  
Shipping  
3000 Tape & Reel  
MMBF0202PLT1  
SOT–23  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 1  
MMBF0202PLT1/D  

MMBF0202PLT1 替代型号

型号 品牌 替代类型 描述 数据表
NTR0202PLT3G ONSEMI

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Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package

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