Datasheet > MMBD4448

MMBD4448

更新时间： 2024-11-20 05:49:19

品牌	Logo	应用领域
商朗 - LUNSURE		二极管开关
页数	文件大小	规格书
3页	57K
描述
Surface mount schottky barrier switching diode 350mW

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中文翻译

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数据手册

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MMBD4448 数据手册

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

MMBD4448

Features

Surface Mount

Schottky Barrier

Switching Diode

350mW

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Mechanical Data

l Case: SOT-23, Molded Plastic

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: See Diagram

SOT-23

l Marking: KA3

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol

V_RM

Value

Unit

Non-Repetitive Peak Reverse Volt.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V^RRM

VRWM

V^R

RMS Reverse Voltage

VR(RMS)

I_FM

Forward Continuous Current(Note1)

Average Rectified Output Current

Non-Repetitive Peak @ t<=1.0s

Forward Surge Current @ t=1.0us

Power Dissipation(Note 1)

500

DIMENSIONS

250

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

I^FSM

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

350

K/W

^oC

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

357

.100

1.12

.180

.51

Tj, T^STG

-55 to +150

.085

.37

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Suggested Solder

Pad Layout

.031

.800

Charateristic

Symbol Min

Max

Unit

Test Cond.

I_F=5.0mA

IF=10mA

0.62 0.72

Maximum Forward

Voltage Drop

V^FM

----- 0.855

IF=100mA

IF=150mA

VR=75V

.035

.900

1.25

2.5

.079

2.000

inches

Maximum Peak

Reverse Current

IRM

-----

uA VR=75V Tj=150^oC

uA VR=25V Tj=150^oC

VR=20V

.037

.950

Junction Capacitance

-----

pF VR=0V, f=1.0MHz

.037

.950

Reverse Recovery Time

trr

Note: 1. Valid provided that terminals are kept at ambient temperature

2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM

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