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MMA036AA-Low-Noise-Amplifier PDF预览

MMA036AA-Low-Noise-Amplifier

更新时间: 2024-09-18 14:52:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 499K
描述
The MMA036AA is a seven-stage traveling wave amplifier. The amplifier features PLFX (Passive Low F

MMA036AA-Low-Noise-Amplifier 数据手册

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MMA036AA  
DC to 65GHz Broadband MMIC  
Low-Noise Amplifier with PLFX  
Description  
Features  
The MMA036AA is a seven stage  
traveling wave amplifier. The amplifier  
features Microsemi PLFX (Passive Low  
Frequency eXtension) circuitry designed  
to reduce the integration cost of the amplifier.  
PLFX isolates the amplifier from bias  
inductor resonances, allowing use  
of a less-expensive coil.  
Integrated PLFX technology:  
Allows use of less-expensive coil  
Very low power dissipation:  
4.5V, 85mA (383mW)  
High drain efficiency (38dBm/W)  
Great 0.04-50GHz performance:  
10.5 ± 1.25dB gain  
14.5dBm Psat, 11dBm P1dB  
5dB noise figure  
Application  
>30dB dynamic gain control  
Integrated temperature-referenced  
power detector output  
100% DC, RF, and visually tested  
Size: 1640x920um (64.6x36.2mil)  
ECCN 3A001.b.2.d  
The MMA036AA Broadband MMIC Low-Noise  
Amplifier with PLFX is designed for high  
efficiency and low-noise broadband  
applications in RF and microwave  
communications, test equipment and  
military systems. By using specific external  
components, the bandwidth of operation  
can be extended below 40MHz.  
Key Characteristics: Vdd=4.5V, Idd=85mA, Zo=50Ω  
Specifications pertain to wafer measurements with RF probes and DC bias cards @ 25°C  
1.5 - 40GHz  
0.04 - 50GHz  
0.04 - 65GHz  
Typ Max  
Parameter  
S21 (dB)  
Description  
Small Signal Gain  
Gain Flatness  
Input Match  
Min Typ Max Min  
Typ Max Min  
9.5  
11  
0.5  
-15  
-15  
-20  
13  
9.5  
10.5  
1.25 1.75  
8
-
-
-
-
-
-
-
-
10  
1.5  
-11  
-12  
-16  
-
-
1.25  
-12  
-12  
-17  
-
-
-
2.0  
-9  
-9  
-13  
-
Flatness (±dB)  
S11 (dB)  
-
-
-
-
-
-
-15  
-12  
-18  
11  
-12  
S22 (dB)  
Output Match  
-
-10  
S12 (dB)  
Reverse Isolation  
-
9.5  
-
-15  
P1dB (dBm)  
Psat (dBm)  
NF (dB)  
1dB Compressed Output Power 11.5  
-
-
-
-
Saturated Output Power  
Noise Figure  
14  
-
15.5  
4.5  
0.5  
14.5  
5
-
-
-
-
-
-
-
RFdet (mV/mW)  
RF Detector Sensitivity  
-
-
-
0.5  
-
-
SMD-00152 RevD  
Subject to Change Without Notice  
1 of 6  

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