Datasheet > MMA044AA-Low-Noise-Amplifier

MMA044AA-Low-Noise-Amplifier

更新时间： 2024-09-18 14:54:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
13页	377K
描述
The MMA044AA is a low noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA

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MMA044AA

6 – 18 GHz GaAs pHEMT MMIC Wideband LNA

Product Overview

The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic

microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The

MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring

only 102 mA from a 4 V supply. The P1dB output power of 16 dBm enables the LNA to function as an LO driver for

balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that

are DC blocked and internally matched to 50Ω, which allows for easy integration into multi-chip modules (MCMs).

The following illustration shows the primary functional blocks of the MMA044AA device.

Key Features

Amplifier Functional Diagram

•

Broadband performance: 6 to 18 GHz

High Gain: 21 dB

Low Noise figure: 1.7 dB

High Output IP3: + 30 dBm

Output P1dB power: + 16 dBm

Maximum RF Input Power: + 24 dBm

Single Postive Supply: + 4V @ 102 mA

50Ω matched input/output

Compact Die size: 1.12 mm X 1.35 mm X 0.1 mm

Applications

Gain, NF & OIP3 Performances

•

Test & Measurement instrumentation

Military and space

Point-to-point and point-to-multi-point Radios

VSAT

Performance Overview

Parameter

Typ. Units

Frequency range

Gain

6 – 18 GHz

0.02 dB/°C

1.7 dB

Gain variation over Temp

Gain

OIP3

Output IP3

+ 30 dBm

+ 16 dBm

Output P1dB

Export Classification: EAR99

FREQUENCY (GHz)

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