Datasheet > MMA047PP4-Low-Noise-Amplifier

MMA047PP4-Low-Noise-Amplifier

更新时间： 2024-09-18 14:55:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
12页	1820K
描述
The MMA047PP4 is a Gallium Arsenide (GaAs), monolithic microwave integrated circuit (MMIC), distri

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MMA047CP4

C/X-Band Low Noise Amplifier with High Input Power Handling

Product Overview

The MMA047CP4 is a Gallium Arsenide (GaAs), monolithic microwave integrated circuit (MMIC),

Pseudomorphic High Electron Mobility Transistor (PHEMT), distributed amplifier operating from 4 to 14 GHz.

Packaged in Hermetically Sealed Ceramic QFN, the amplifier operates reliably with input powers up to

32dBm of RF CW power. Noise Figure is 1.5dB, 21dB of gain, 34dBm OIP3, and 21dBm of output power at 1

dB compression. The MMA047CP4 amplifier is internally matched to 50 Ω.

Key Features

Functional Block Diagram



Frequency range: 5 to 14 GHz

Gain: 21 dB

High OIP3: 34 dBm

Noise Figure: 1.5 dB

CW Input Power rating: 32dBm

Single Supply with Adjustable Current

On-Chip Bias Choke

Supply: 7V @ 170mA

RF/DC ESD Protection on Chip

50 Ohm Matched Input/Output

Package: 4x4mm Ceramic QFN

Hermetically Sealed

Figure 1 - Gain, NF Performances

Applications

• Telecommunications

• Military and space

• Wideband microwave radios

• SatCom

Performance Overview

Parameter

Typ.

5-14

Units

GHz

Operational frequency range

Gain

Noise Figure

P1dB

1.5

dBm

OIP3

Current @ +7V Supply

170

Export Classification: EAR-99

Rev.0.14

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