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MMA047AA-Low-Noise-Amplifier PDF预览

MMA047AA-Low-Noise-Amplifier

更新时间: 2024-09-18 14:53:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
25页 5826K
描述
MMA047AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distrib

MMA047AA-Low-Noise-Amplifier 数据手册

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MMA047AA  
X-Band High-Input-Power Low Noise Amplifier  
Product Overview  
MMA047AA is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed amplifier  
specifically made to operate between 5 and 14 GHz. The bare die amplifier provides reliable operation with up to 30dBm of  
input RF CW power having 1.5dB of noise, 22.5dB of gain, 34dBm output IP3, and 22.5dBm of output power at 1 dB  
compression. Die was designed to handle more Input power (more than 35dBm CW and 43dBm pulsed) with external PIN  
diode, having minimum external circuit requirements and excellent noise figure. The MMA047AA amplifier features  
compact die size and I/Os that are internally matched to 50 Ohm.  
Key Features  
Functional Block Diagram  
Frequency range: 5 to 14 GHz  
Gain: 22 dB  
High IP3: 34 dBm  
Low Noise: 1.5 dBm  
Die Input Power handling: >30dBm (CW)  
Adjustable Self-Bias Operation  
On-die Choke  
Supply: 7V @ 180mA  
100% ESD Protection  
50 Ohm Matched Input/Output  
Die: 2.02 x 1. 47 x 0.1 mm  
Figure 1 - Typical Responses  
Applications  
• Test and measurement instrumentation  
• Electronic warfare (EW), electronic countermeasures  
(ECM), and electronic counter-countermeasures (ECCM)  
• Military, A&D, space, SATCOM  
• Telecom infrastructure  
• Wideband microwave radios  
• Microwave and millimeter-wave communications systems  
Performance Overview  
Parameter  
Typ.  
5-14  
22  
Units  
GHz  
dB  
Operational frequency range  
Gain  
Noise Figure  
P1dB  
1.5  
22  
dB  
dBm  
dBm  
OIP3  
34  
Export Classification: EAR-99  
© 20213 Microchip Technology Inc.  
Rev.0.11  
Page 1 of 25  
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