Datasheet > MMA044PP3-Low-Noise-Amplifier

MMA044PP3-Low-Noise-Amplifier

更新时间： 2024-09-18 14:53:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
13页	591K
描述
The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT)

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MMA044PP3

4 – 18 GHz MMIC Wideband LNA

Product Overview

The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise

wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 4 GHz and

18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.5 dB noise figure, 15 dBm P1dB, and 28 dBm output

IP3. The amplifier draws only 100 mA of current from a 4 V supply. The P1dB power of 15 dBm enables the LNA to

function as an LO driver. The RF input and output ports of the amplifier are DC blocked and internally matched to 50

Ω. This product is also available in die format as the MMA044AA.

The following illustration shows the primary functional diagram of the MMA044PP3 device.

Key Features

•

Frequency range: 4 to 18 GHz

High Gain: 17 dB

Figure 1. Functional Block Diagram

Low Noise figure: 2.5 dB

High Output IP3: + 28 dBm

High Output P1dB: + 15 dBm

Single Positive Supply: +4V

50 Ω matched input/output

Compact 16-lead 3 mm X 3 mm X 0.85 mm QFN

package

Applications

•

Test and measurement instrumentation

Figure 2. Gain, NF, OIP3 & OP1dB Performances

Electronic warfare (EW), electronic countermeasures

(ECM), and electronic counter-countermeasures (ECCM)

•

Military and space

Telecom infrastructure

Wideband microwave radios

Microwave and millimeter-wave communication systems

Performance Overview

Parameter

Frequency range

Gain

Typ.

4 – 18

Units

GHz

Gain

OIP3

OP1dB

2.5

Output IP3

+ 28

dBm

Frequency (GHz)

Export Classification: EAR99

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