Datasheet > MMA042AA-Low-Noise-Amplifier

MMA042AA-Low-Noise-Amplifier

更新时间： 2024-09-18 14:52:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
23页	5404K
描述
The MMA042AA is a distributed amplifier die that operates between 2 GHz and 26 GHz. The amplifier

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MMA042AA-Low-Noise-Amplifier 数据手册

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MMA042AA

2 – 26 GHz GaAs Distributed Self-Biased LNA

Product Overview

MMA042AA is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) Pseudomorphic High Electron

Mobility Transistor (PHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal

for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a

typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3

at 10 GHz. The MMA042AA amplifier features RF I/O’s that are internally matched to 50 Ohm, which allows for easy

integration into multi-chip modules (MCMs).

Key Features

Functional Block Diagram



Frequency range: 2 to 26 GHz

High Gain: 18 dB with +2 dB upslope

Low Noise figure: 2.5 dB

High Output IP3: + 29 dBm

Maximum RF Input Power: + 24 dBm

Single Positive Supply: +6V @ 120 mA

50 Ohm matched input/output

ESD Protection on RF and DC ports

Die size: 2.020 x 1.630 mm

Figure 1 - Typical Responses

Applications

• Test and measurement instrumentation

• Electronic warfare (EW), electronic countermeasures

(ECM), and electronic counter-countermeasures (ECCM)

• Military, A&D, space, SATCOM

• Telecom infrastructure

• Wideband microwave radios

• Microwave and millimeter-wave communications systems

Performance Overview

Parameter

Typ.

2-26

Units

GHz

Operational frequency range

Gain

OIP3

dBm

2.5

Current @ +6V Supply

120

Export Classification: EAR-99

Rev.0.11

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