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MMA042PP4-Low-Noise-Amplifier

更新时间： 2024-09-18 14:53:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
16页 537K
描述
MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) distributed

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MMA042PP4-Low-Noise-Amplifier 数据手册

 浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第2页浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第3页浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第4页浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第5页浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第6页浏览型号MMA042PP4-Low-Noise-Amplifier的Datasheet PDF文件第7页 
MMA042PP4  
2 – 26 GHz Distributed Self-Biased LNA  
Product Overview  
MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-  
electron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test  
instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain  
of 18 dB, 2.5 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz.  
The MMA042PP4 amplifier features RF I/Os that are internally matched to 50 Ω.  
Key Features  
Functional Block Diagram  
•
•
•
•
•
•
•
•
Frequency range: 2 to 26 GHz  
High Gain: 18 dB with +2 dB upslope  
Low Noise figure: 2.5 dB  
VDD  
22  
24  
23  
21  
20  
19  
1
2
3
4
5
6
18  
17  
16  
15  
14  
13  
High Output IP3: + 29 dBm  
MMA042PP4  
Maximum RF Input Power: + 24 dBm  
Single Positive Supply: +6V @ 120 mA (+8V VDD max)  
ESD Protection on RF and DC ports  
50 Ω matched input/output  
RFOUT  
RFOUT  
RFIN  
RFIN  
GND  
PACKAGE  
BASE  
7
8
9
VSB  
10  
VGA  
11  
VGB  
12  
Applications  
Gain, OIP3& NF Performances  
•
•
Test and measurement instrumentation  
Electronic warfare (EW), electronic countermeasures  
(ECM), and electronic counter-countermeasures (ECCM)  
35  
30  
25  
20  
15  
10  
5
7
6
5
4
3
2
1
Gain  
OIP3  
NF  
•
•
•
•
Military and space  
Telecom infrastructure  
Wideband microwave radios  
Microwave and millimeter-wave communication systems  
Performance Overview  
Parameter  
Frequency range  
Gain  
Typ.  
2 – 26  
18  
Units  
GHz  
dB  
Gain flatness  
NF  
± 0.75  
2.5  
dB  
dB  
Output IP3  
+ 29  
dBm  
0
5
10  
15  
20  
25  
30  
Export Classification: EAR99  
Frequency (GHz)  
A-page 1  
Draft Datasheet  
© 2021 Microchip Technology Inc.  
and its subsidiaries  
1234567...16

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