Datasheet > MMA041PP5-Low-Noise-Amplifier

MMA041PP5-Low-Noise-Amplifier

更新时间： 2024-09-18 14:55:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
19页	1650K
描述
The MMA041PP5 is a low noise distributed amplifier in a leadless 5 mm × 5 mm SMT package that oper

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MMA041PP5

DC – 25 GHz GaAs MMIC Distributed LNA

Product Overview

MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-

electron-mobility transistor (pHEMT) distributed low noise amplifier in a leadless 5 mm × 5 mm surface-mount

package that operates between DC and 25 GHz. It is ideal for test instrumentation, wideband military and space

applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm

gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5

amplifier features RF I/Os that are internally matched to 50 Ω. It is also available in die form as the MMA041AA.

Key Features

Amplifier Functional Diagram

•

Broadband performance: DC to 26 GHz

High gain: 18.5 dB

Low noise figure: 3.2 dB

High output IP3: + 36 dBm

Positive supply : + 7V @ 150 mA

50Ω matched I/O

Compact die size: 3 mm × 1.3 mm × 0.1 mm

Applications

NF Performances

•

Test and measurement instrumentation

Military and space

Wideband microwave radios

Microwave and mm-Wave communication systems

Performance Overview

Parameter

Frequency range

Gain

Typ.

DC – 26

18.5

Units

GHz

Output IP3

P1dB

+ 36

+ 22

dBm

Export Classification: EAR99

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