Datasheet > MMA041AA-Low-Noise-Amplifier

MMA041AA-Low-Noise-Amplifier

更新时间： 2024-09-18 14:52:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	1101K
描述
The MMA041AA is a low noise distributed amplifier die that operates between DC and 26 GHz. The amp

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DC – 26 GHz GaAs Distributed LNA

MMA041AA

Product Overview

MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-

electron mobility transistor (pHEMT) distributed ampliﬁer die that operates between DC and 26 GHz. It is ideal

for test instrumentation and communications infrastructure applications. The ampliﬁer provides a ﬂat gain of

18 dB, 3.2 dB noise ﬁgure, and 22 dBm of output power at 1 dBm gain compression. Output IP3 is typically

36 dBm. The MMA041AA ampliﬁer features RF I/Os that are internally matched to 50Ω, which allows for easy

integration into multi-chip modules (MCMs). It is also available in packaged form as the MMA041PP5.

The following image shows the primary functional blocks of the MMA041AA device..

Key Features

Ampliﬁer Functional Diagram

•

Broadband performance: DC to 26 GHz

High gain: 18.5 dB

Low noise ﬁgure: 3.2 dB

RFOUT

High output IP3: + 36 dBm

Positive supply : +7V at 150 mA

50Ω matched I/O

RFIN

Compact die size: 3 mm × 1.3 mm × 0.1 mm

Applications

Gain, NF, OIP3, & P1dB Performances

•

Test and measurement instrumentation

Electronic warfare (EW), electronic countermeasures

(ECM), and electronic counter-countermeasures (ECCM)

•

Military and space

Telecom infrastructure

Wideband microwave radios

Microwave and mm-Wave communication systems

Performance Overview

Gain

OIP3

P1dB

Parameter

Frequency range DC – 26 GHz

Gain

Typ. Units

18.5 dB

Output IP3

P1dB

+36 dBm

+22 dBm

Frquency (GHz)

Export Classiﬁcation: EAR99

Data Sheet

DS00004636A - 1

12 3 4 5 6 7...16

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与MMA041AA-Low-Noise-Amplifier相关器件

型号	品牌	获取价格	描述	数据表
MMA041PP5-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA041PP5 is a low noise distributed ampl
MMA042AA-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA042AA is a distributed amplifier die that operates between 2 GHz and 26 GHz. The am
MMA042PP4-Low-Noise-Amplifier	MICROCHIP	获取价格	MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) dist
MMA043AA-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA043AA is a low noise wideband amplifier die that operates between 0.5 GHz and 12 GH
MMA043PP4-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA043PP4 is a low noise wideband amplifi
MMA044AA-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA044AA is a low noise wideband amplifier die that operates between 6 GHz and 18 GHz.
MMA044PP3-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor
MMA047AA-Low-Noise-Amplifier	MICROCHIP	获取价格	MMA047AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT
MMA047PP4-Low-Noise-Amplifier	MICROCHIP	获取价格	The MMA047PP4 is a Gallium Arsenide (GaAs), monolithic microwave integrated circuit (MMIC)
MMA-053223-Q3	IXYS	获取价格	Wide Band Medium Power Amplifier, 500MHz Min, 3200MHz Max, 3 X 3 MM, GREEN, QFN-16

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