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MJF122 PDF预览

MJF122

更新时间： 2024-11-25 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
7页 156K
描述
COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W

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中文翻译

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MJF122 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：CASE 221D-03, TO-220, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：6.14Is Samacsys：N
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：5 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：2000
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：30 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

MJF122 数据手册

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MJF122, MJF127  
Complementary Power  
Darlingtons  
For Isolated Package Applications  
Designed for general−purpose amplifiers and switching  
applications, where the mounting surface of the device is required to  
be electrically isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER DARLINGTONS  
5.0 A, 100 V, 30 W  
Features  
• Electrically Similar to the Popular TIP122 and TIP127  
• 100 V  
CEO(sus)  
• 5.0 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
MARKING  
DIAGRAM  
• High DC Current Gain − 2000 (Min) @ I = 3 Adc  
C
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
MJF12xG  
AYWW  
TO−220  
CASE 221D−02  
STYLE 2  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
V
EB  
x
G
A
Y
= 2 or 7  
RMS Isolation Voltage (Note 1) Test No. 1  
Per Figure 14 (for 1 sec, R.H. < 30%,  
V
ISOL  
4500  
3500  
1500  
V
RMS  
= Pb−Free Package  
= Assembly Location  
= Year  
Test No. 2 Per Figure 15 T = 25_C)  
A
Test No. 3 Per Figure 16  
WW  
= Work Week  
Collector Current − Continuous  
I
C
5
8
Adc  
Adc  
Peak  
ORDERING INFORMATION  
Base Current  
I
B
0.12  
Total Power Dissipation (Note 2)  
P
†
50 Units / Rail  
50 Units / Rail  
D
Device  
Package  
Shipping  
@ T = 25_C  
30  
0.24  
W
C
Derate above 25_C  
MJF122  
TO−220  
W/_C  
Total Power Dissipation @ T = 25_C  
P
D
2
W
A
MJF122G  
TO−220  
(Pb−Free)  
Derate above 25_C  
0.016  
W/_C  
Operating and Storage Junction Tempera-  
ture Range  
T , T  
J
−65 to  
+150  
I
C
stg  
MJF127  
TO−220  
50 Units / Rail  
50 Units / Rail  
MJF127G  
TO−220  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
4.1  
Unit  
_C/W  
_C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Thermal Resistance, Junction−to−Case  
(Note 2)  
R
q
JC  
Lead Temperature for Soldering Purpose  
T
260  
_C  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Proper strike and creepage distance must be provided.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Measurement made with thermocouple contacting the bottom insulated  
mounting surface (in a location beneath the die), the device mounted on a  
heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
MJF122/D  
 
1234567

中文翻译

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MJF122 替代型号

型号 品牌 替代类型 描述 数据表
MJF122G ONSEMI

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