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MJF15031 PDF预览

MJF15031

更新时间： 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 249K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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MJF15031 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：6.13其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：8 A
集电极-发射极最大电压：150 V配置：SINGLE
最小直流电流增益 (hFE)：20JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：140 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：PNP
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：30 MHzBase Number Matches：1

MJF15031 数据手册

 浏览型号MJF15031的Datasheet PDF文件第2页浏览型号MJF15031的Datasheet PDF文件第3页浏览型号MJF15031的Datasheet PDF文件第4页浏览型号MJF15031的Datasheet PDF文件第5页浏览型号MJF15031的Datasheet PDF文件第6页 
Order this document  
by MJF15030/D  
SEMICONDUCTOR TECHNICAL DATA  
For Isolated Package Applications  
Designed for general–purpose amplifier and switching applications, where the  
mounting surface of the device is required to be electrically isolated from the heatsink  
or chassis.  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
•
•
•
•
•
•
Electrically Similar to the Popular MJE15030 and MJE15031  
150 V  
8 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
CEO(sus)  
150 VOLTS  
36 WATTS  
High Current Gain–Bandwidth Product  
f
= 30 MHz (Min) @ I = 500 mAdc  
T
C
•
UL Recognized, File #E69369, to 3500 V Isolation  
RMS  
CASE 221D–02  
TO–220 TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
150  
150  
5
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (1)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 11  
Test No. 2 Per Fig. 12  
Test No. 3 Per Fig. 13  
V
ISOL  
4500  
3500  
1500  
V
RMS  
T
= 25 C)  
A
Collector Current — Continuous  
— Peak  
I
8
16  
Adc  
Adc  
C
Base Current  
I
2
B
Total Power Dissipation* @ T = 25 C  
C
Derate above 25 C  
P
D
36  
0.29  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2
Watts  
W/ C  
0.016  
Operating and Storage Junction Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
3.5  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case*  
Lead Temperature for Soldering Purpose  
R
R
θJA  
θJC  
T
L
260  
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on  
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.  
(1) Proper strike and creepage distance must be provided.  
Motorola, Inc. 1995
123456

中文翻译

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MJF15031 替代型号

型号 品牌 替代类型 描述 数据表
MJF15031G ONSEMI

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