Datasheet > MJF13009

MJF13009

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	105K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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MJF13009 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

MJF13009 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJF13009

DESCRIPTION

·Collector–Emitter Sustaining Voltage

: V_CEO(SUS)= 400V(Min.)

·Collector Saturation Voltage

: V_CE(sat)= 1.5 (Max) @ I_C= 8.0A

·Switching Time

: t_f= 0.7μs(Max.)@ I_C= 8.0A

APPLICATIONS

·Designed for use in high-voltage, high-speed, power swit-

ching in inductive circuit, they are particularly suited for

115 and 220V switchmode applications such as switching

regulators,inverters,Motor controls,Solenoid/Relay drivers

and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CEV

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-peak

Base Current

VALUE

700

400

UNIT

I_CM

I_B

I_BM

Base Current-Peak

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-65~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

2.5

℃/W

R_{th j-c}

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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