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MJF15030_06

更新时间： 2024-11-25 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 143K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS

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MJF15030_06 数据手册

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MJF15030 (NPN),  
MJF15031 (PNP)  
Complementary Power  
Transistors  
For Isolated Package Applications  
Designed for general−purpose amplifier and switching applications,  
where the mounting surface of the device is required to be electrically  
isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Electrically Similar to the Popular MJE15030 and MJE15031  
• 150 V  
CEO(sus)  
150 VOLTS, 36 WATTS  
• 8 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
MARKING  
DIAGRAM  
• High Current Gain−Bandwidth Product −  
f = 30 MHz (Min) @ I  
T
C
= 500 mAdc  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
TO−220 FULLPACK  
MAXIMUM RATINGS  
MJF1503xG  
AYWW  
1
CASE 221D  
STYLE 2  
2
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
150  
150  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (Note 1)  
V
V
RMS  
ISOL  
Test No. 1 Per Figure 11  
4500  
3500  
1500  
Test No. 2 Per Figure 12  
Test No. 3 Per Figure 13  
MJF1503x = Specific Device Code  
x = 0 or 1  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Collector Current − Continuous  
− Peak  
I
C
8
16  
Adc  
Adc  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Base Current  
I
B
2
Total Power Dissipation (Note 2) @ T = 25_C  
P
36  
W
WW  
= Work Week  
C
D
0.016  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
ORDERING INFORMATION  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
–65 to +150  
_C  
stg  
Device  
Package  
Shipping  
Characteristic  
Symbol  
Max  
62.5  
3.5  
Unit  
_C/W  
_C/W  
_C  
MJF15030  
TO−220 FULLPACK 50 Units/Rail  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case (Note 2)  
Lead Temperature for Soldering Purposes  
R
MJF15030G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
q
JA  
R
q
JC  
MJF15031  
TO−220 FULLPACK 50 Units/Rail  
T
L
260  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJF15031G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
MJF15030/D  
 
123456

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