5秒后页面跳转
捷配首页

Datasheet > MJF15030_06
MJF15030_06 PDF预览

MJF15030_06

更新时间： 2024-11-03 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 143K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS

阅读下载

中文翻译

获取价格

MJF15030_06 数据手册

 浏览型号MJF15030_06的Datasheet PDF文件第2页浏览型号MJF15030_06的Datasheet PDF文件第3页浏览型号MJF15030_06的Datasheet PDF文件第4页浏览型号MJF15030_06的Datasheet PDF文件第5页浏览型号MJF15030_06的Datasheet PDF文件第6页 
MJF15030 (NPN),  
MJF15031 (PNP)  
Complementary Power  
Transistors  
For Isolated Package Applications  
Designed for general−purpose amplifier and switching applications,  
where the mounting surface of the device is required to be electrically  
isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Electrically Similar to the Popular MJE15030 and MJE15031  
• 150 V  
CEO(sus)  
150 VOLTS, 36 WATTS  
• 8 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
MARKING  
DIAGRAM  
• High Current Gain−Bandwidth Product −  
f = 30 MHz (Min) @ I  
T
C
= 500 mAdc  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
TO−220 FULLPACK  
MAXIMUM RATINGS  
MJF1503xG  
AYWW  
1
CASE 221D  
STYLE 2  
2
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
150  
150  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (Note 1)  
V
V
RMS  
ISOL  
Test No. 1 Per Figure 11  
4500  
3500  
1500  
Test No. 2 Per Figure 12  
Test No. 3 Per Figure 13  
MJF1503x = Specific Device Code  
x = 0 or 1  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Collector Current − Continuous  
− Peak  
I
C
8
16  
Adc  
Adc  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Base Current  
I
B
2
Total Power Dissipation (Note 2) @ T = 25_C  
P
36  
W
WW  
= Work Week  
C
D
0.016  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
ORDERING INFORMATION  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
–65 to +150  
_C  
stg  
Device  
Package  
Shipping  
Characteristic  
Symbol  
Max  
62.5  
3.5  
Unit  
_C/W  
_C/W  
_C  
MJF15030  
TO−220 FULLPACK 50 Units/Rail  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case (Note 2)  
Lead Temperature for Soldering Purposes  
R
MJF15030G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
q
JA  
R
q
JC  
MJF15031  
TO−220 FULLPACK 50 Units/Rail  
T
L
260  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJF15031G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
MJF15030/D  
 
123456

中文翻译

下载PDF

与MJF15030_06相关器件

型号 品牌 获取价格 描述 数据表
MJF15030_08 ONSEMI

获取价格

 		Complementary Power Transistors
MJF15030-BS01 MCC

获取价格

 		Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJF15030-BS01-BP MCC

获取价格

 		Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJF15030G ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
MJF15031 ISC

获取价格

 		Silicon PNP Power Transistors
MJF15031 SAVANTIC

获取价格

 		Silicon PNP Power Transistors
MJF15031 MOTOROLA

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF15031 ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJF15031G ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
MJF16002 MOTOROLA

获取价格

 		Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与MJF15030_06相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证