Datasheet > MJF15031

MJF15031

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	56K
描述
Silicon PNP Power Transistors

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中文翻译

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技术参数
数据手册

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MJF15031 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

MJF15031 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

MJF15031

DESCRIPTION

·With TO-220F package

·Complement to type MJE15028/30

·High transition frequency

·DC Current Gain Specified to 4.0 Amperes

h_FE= 40 (Min) @ I_C=- 3.0 Adc

h_FE= 20 (Min) @ I_C= -4.0 Adc

APPLICATIONS

·Designed for use as high–frequency

drivers in audio amplifiers.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220F) and symbol

Emitter

Absolute maximum ratings (Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-150

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

Open base

Open collector

-8

I_CM

-16

I_B

-2

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance ; junction to case

Thermal resistance , junction to ambient

MAX

3.5

UNIT

℃/W

R_{th j-C}

R_{th j-A}

62.5

12 3 4

中文翻译

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