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MJF15030_08 PDF预览

MJF15030_08

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 135K
描述
Complementary Power Transistors

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MJF15030_08 数据手册

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MJF15030 (NPN),  
MJF15031 (PNP)  
Complementary Power  
Transistors  
For Isolated Package Applications  
Designed for general−purpose amplifier and switching applications,  
where the mounting surface of the device is required to be electrically  
isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Electrically Similar to the Popular MJE15030 and MJE15031  
• 150 V  
CEO(sus)  
150 VOLTS, 36 WATTS  
• 8 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
MARKING  
DIAGRAM  
• High Current Gain−Bandwidth Product −  
f = 30 MHz (Min) @ I  
T
C
= 500 mAdc  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
TO−220 FULLPACK  
MAXIMUM RATINGS  
MJF1503xG  
AYWW  
1
CASE 221D  
STYLE 2  
2
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
150  
150  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
EB  
V
RMS Isolation Voltage (Note 1)  
V
ISOL  
V
RMS  
(t = 0.3 sec, R.H. ≤ 30%, T = 25_C)  
4500  
A
Per Figure 11  
Collector Current − Continuous  
− Peak  
I
8
Adc  
Adc  
C
MJF1503x = Specific Device Code  
x = 0 or 1  
16  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Base Current  
I
2
B
Total Power Dissipation (Note 2) @ T = 25_C  
P
36  
0.016  
W
C
D
Derate above 25_C  
W/_C  
WW  
= Work Week  
Total Power Dissipation @ T = 25_C  
P
2.0  
0.016  
W
A
D
Derate above 25_C  
W/_C  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T , T  
–65 to +150  
_C  
J
stg  
ORDERING INFORMATION  
Symbol  
Max  
62.5  
3.5  
Unit  
_C/W  
_C/W  
_C  
Device  
MJF15030  
Package  
Shipping  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case (Note 2)  
Lead Temperature for Soldering Purposes  
R
q
JA  
TO−220 FULLPACK 50 Units/Rail  
R
q
JC  
MJF15030G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
T
260  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJF15031  
TO−220 FULLPACK 50 Units/Rail  
MJF15031G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 6  
MJF15030/D  
 
123456

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