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MJF15030G PDF预览

MJF15030G

更新时间： 2024-11-25 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
6页 143K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS

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中文翻译

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MJF15030G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.85
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：8 A集电极-发射极最大电压：150 V
配置：SINGLE最小直流电流增益 (hFE)：20
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

MJF15030G 数据手册

 浏览型号MJF15030G的Datasheet PDF文件第2页浏览型号MJF15030G的Datasheet PDF文件第3页浏览型号MJF15030G的Datasheet PDF文件第4页浏览型号MJF15030G的Datasheet PDF文件第5页浏览型号MJF15030G的Datasheet PDF文件第6页 
MJF15030 (NPN),  
MJF15031 (PNP)  
Complementary Power  
Transistors  
For Isolated Package Applications  
Designed for general−purpose amplifier and switching applications,  
where the mounting surface of the device is required to be electrically  
isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Electrically Similar to the Popular MJE15030 and MJE15031  
• 150 V  
CEO(sus)  
150 VOLTS, 36 WATTS  
• 8 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
MARKING  
DIAGRAM  
• High Current Gain−Bandwidth Product −  
f = 30 MHz (Min) @ I  
T
C
= 500 mAdc  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
TO−220 FULLPACK  
MAXIMUM RATINGS  
MJF1503xG  
AYWW  
1
CASE 221D  
STYLE 2  
2
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
150  
150  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (Note 1)  
V
V
RMS  
ISOL  
Test No. 1 Per Figure 11  
4500  
3500  
1500  
Test No. 2 Per Figure 12  
Test No. 3 Per Figure 13  
MJF1503x = Specific Device Code  
x = 0 or 1  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Collector Current − Continuous  
− Peak  
I
C
8
16  
Adc  
Adc  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Base Current  
I
B
2
Total Power Dissipation (Note 2) @ T = 25_C  
P
36  
W
WW  
= Work Week  
C
D
0.016  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
ORDERING INFORMATION  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
–65 to +150  
_C  
stg  
Device  
Package  
Shipping  
Characteristic  
Symbol  
Max  
62.5  
3.5  
Unit  
_C/W  
_C/W  
_C  
MJF15030  
TO−220 FULLPACK 50 Units/Rail  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case (Note 2)  
Lead Temperature for Soldering Purposes  
R
MJF15030G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
q
JA  
R
q
JC  
MJF15031  
TO−220 FULLPACK 50 Units/Rail  
T
L
260  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJF15031G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
MJF15030/D  
 
123456

中文翻译

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MJF15030G 替代型号

型号 品牌 替代类型 描述 数据表
MJF15030 ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS
NTE54 NTE

功能相似

 Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

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