MJF13007

更新时间： 2024-11-02 22:30:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
10页	340K
描述
POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

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MJF13007 技术参数

生命周期：	Transferred	零件包装代码：	SFM
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.46
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	5
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	40 W	最大功率耗散 (Abs)：	50 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	14 MHz	最大关闭时间（toff）：	3700 ns
最大开启时间（吨）：	1600 ns	VCEsat-Max：	3 V
Base Number Matches：	1

MJF13007 数据手册

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by MJE13007/D

SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Transistor

For Switching Power Supply Applications

POWER TRANSISTOR

8.0 AMPERES

400 VOLTS

The MJE/MJF13007 is designed for high–voltage, high–speed power switching

inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

switchmode applications such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

80/40 WATTS

•

400 V

CEO(sus)

Reverse Bias SOA with Inductive Loads @ T = 100°C

700 V Blocking Capability

SOA and Switching Applications Information

Two Package Choices: Standard TO–220 or Isolated TO–220

MJF13007 is UL Recognized to 3500 V

, File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol MJE13007 MJF13007

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

400

700

9.0

CEO

CES

EBO

Collector Current — Continuous

Collector Current — Peak (1)

8.0

Base Current — Continuous

Base Current — Peak (1)

4.0

8.0

Adc

Emitter Current — Continuous

Emitter Current — Peak (1)

CASE 221A–06

TO–220AB

MJE13007

RMS Isolation Voltage

(for 1 sec, R.H. < 30%, T = 25°C)

ISOL

Test No. 1 Per Fig. 15

Test No. 2 Per Fig. 16

Test No. 3 Per Fig. 17

—

4500

3500

1500

Proper strike and creepage distance must

be provided

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.64

40*

0.32

Watts

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

°1.56°

°62.5°

°3.12°

°62.5°

°C/W

θJC

θJA

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF13007

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

°C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

*Measurement made with thermocouple contacting the bottom insulated mountign surface of the

*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied

*at a mounting torque of 6 to 8•lbs.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与MJF13007相关器件

型号	品牌	获取价格	描述	数据表
MJF13009	ISC	获取价格	isc Silicon NPN Power Transistor
MJF13009	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF13009	NJSEMI	获取价格	Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220
MJF15030	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJF15030	MOTOROLA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF15030	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJF15030_06	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
MJF15030_08	ONSEMI	获取价格	Complementary Power Transistors
MJF15030-BS01	MCC	获取价格	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJF15030-BS01-BP	MCC	获取价格	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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