5秒后页面跳转
MJF127G PDF预览

MJF127G

更新时间: 2024-11-12 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
7页 156K
描述
COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W

MJF127G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, CASE 221D-03, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.83其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):2000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJF127G 数据手册

 浏览型号MJF127G的Datasheet PDF文件第2页浏览型号MJF127G的Datasheet PDF文件第3页浏览型号MJF127G的Datasheet PDF文件第4页浏览型号MJF127G的Datasheet PDF文件第5页浏览型号MJF127G的Datasheet PDF文件第6页浏览型号MJF127G的Datasheet PDF文件第7页 
MJF122, MJF127  
Complementary Power  
Darlingtons  
For Isolated Package Applications  
Designed for generalpurpose amplifiers and switching  
applications, where the mounting surface of the device is required to  
be electrically isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER DARLINGTONS  
5.0 A, 100 V, 30 W  
Features  
Electrically Similar to the Popular TIP122 and TIP127  
100 V  
CEO(sus)  
5.0 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
MARKING  
DIAGRAM  
High DC Current Gain 2000 (Min) @ I = 3 Adc  
C
UL Recognized, File #E69369, to 3500 V  
PbFree Packages are Available*  
Isolation  
RMS  
MJF12xG  
AYWW  
TO220  
CASE 221D02  
STYLE 2  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CB  
V
EB  
x
G
A
Y
= 2 or 7  
RMS Isolation Voltage (Note 1) Test No. 1  
Per Figure 14 (for 1 sec, R.H. < 30%,  
V
ISOL  
4500  
3500  
1500  
V
RMS  
= PbFree Package  
= Assembly Location  
= Year  
Test No. 2 Per Figure 15 T = 25_C)  
A
Test No. 3 Per Figure 16  
WW  
= Work Week  
Collector Current Continuous  
I
C
5
8
Adc  
Adc  
Peak  
ORDERING INFORMATION  
Base Current  
I
B
0.12  
Total Power Dissipation (Note 2)  
P
50 Units / Rail  
50 Units / Rail  
D
Device  
Package  
Shipping  
@ T = 25_C  
30  
0.24  
W
C
Derate above 25_C  
MJF122  
TO220  
W/_C  
Total Power Dissipation @ T = 25_C  
P
D
2
W
A
MJF122G  
TO220  
(PbFree)  
Derate above 25_C  
0.016  
W/_C  
Operating and Storage Junction Tempera-  
ture Range  
T , T  
J
65 to  
+150  
I
C
stg  
MJF127  
TO220  
50 Units / Rail  
50 Units / Rail  
MJF127G  
TO220  
(PbFree)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
4.1  
Unit  
_C/W  
_C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
Thermal Resistance, JunctiontoCase  
(Note 2)  
R
q
JC  
Lead Temperature for Soldering Purpose  
T
260  
_C  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Proper strike and creepage distance must be provided.  
*For additional information on our PbFree strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Measurement made with thermocouple contacting the bottom insulated  
mounting surface (in a location beneath the die), the device mounted on a  
heatsink with thermal grease and a mounting torque of 6 in. lbs.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 Rev. 5  
MJF122/D  
 

MJF127G 替代型号

型号 品牌 替代类型 描述 数据表
MJF127 ONSEMI

类似代替

COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W
MJF6668G ONSEMI

类似代替

COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS
MJF6668 ONSEMI

类似代替

COMPLEMENTARY SILICON POWER DARLINGTONS

与MJF127G相关器件

型号 品牌 获取价格 描述 数据表
MJF13007 MOTOROLA

获取价格

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS
MJF13007 ONSEMI

获取价格

POWER TRANSISTOR
MJF13007 SAVANTIC

获取价格

Silicon NPN Power Transistors
MJF13007 NJSEMI

获取价格

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220
MJF13009 ISC

获取价格

isc Silicon NPN Power Transistor
MJF13009 MOTOROLA

获取价格

12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF13009 NJSEMI

获取价格

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220
MJF15030 SAVANTIC

获取价格

Silicon NPN Power Transistors
MJF15030 MOTOROLA

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF15030 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS