Datasheet > MJD42C-TP

MJD42C-TP

更新时间： 2024-09-13 14:53:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	367K
描述
Power Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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MJD42C-TP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
Base Number Matches：	1

MJD42C-TP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MJD42C

Micro Commercial Components

Features

Halogen free available upon request by adding suffix "-HF"

Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS

Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Electrically similar to popular TIP41 and TIP42 Series

Monolithic Construction With Built-in Base-Emitter

Resistors

Silicon

PNP epitaxial planer

Transistors

DPAK

Maximum Ratings @ 25 C Unless Otherwise Specified

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

-100

-5

Unit

Collector Current-Continuous

-6

P_C

T_J

Collector Dissipation

Operating Junction Temperature

1.25

150

T_STG

Storage Temperature

-65 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

V_(BR)CEO

Parameter

Collector-Emitter Breakdown Voltage

(I_C=-30mAdc, I_B=0)

Min

Typ

Max

Units

-100

---

Vdc

V_(BR)CBO

V_(BR)EBO

I_CEO

Collector-Base Breakdown Voltage

(I_C=-0.1mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-0.1mAdc, I_C=0)

Collector Cutoff Current

(V_CE=-60Vdc, I_B=0)

Emitter Cutoff Current

-100

-5

---

Vdc

---

-50

-500

uAdc

I_EBO

---

(V_EB=-5Vdc, I_C=0)

PIN 1. BASE

PIN 2. COLLECTOR

PIN 3. EMITTER

h_FE

DC Current Gain

(I_C=-0.3Adc, V_CE=-4Vdc)

(I_C=-3Adc, V_CE=-4Vdc)

---

DIMENSIONS

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=-6Adc, I_B=-0.6Adc)

INCHES

MAX

---

-1.5

Vdc

DIM

MIN

MAX

2.40

0.13

0.86

0.58

6.70

5.46

NOTE

0.087

0.000

0.026

0.018

0.256

0.201

0.094

0.005

0.034

0.023

0.264

0.215

2.20

0.00

0.66

0.46

6.50

5.10

V_BE(on)

Base-Emitter Voltage

(IC=-6Adc, VCE=-4Vdc )

---

-2.0

---

Vdc

Transition frequency

(V_CE=-10Vdc,IC=-0.5Adc,fT=1KHz)

f_T

MHZ

0.190

4.83

0.236

0.086

0.386

0.244

0.094

0.409

6.00

2.18

9.80

6.20

2.39

10.40

0.114

0.063

0.043

0.000

2.90

1.60

0.055

0.067

1.40

1.70

0.051

0.012

1.10

0.00

1.30

0.30

0.211

5.35

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Revision: A

2014/05/22

中文翻译

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与MJD42C-TP相关器件

型号	品牌	获取价格	描述	数据表
MJD42R-HAF	SWST	获取价格	功率三极管
MJD44	MOTOROLA	获取价格	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44	FAIRCHILD	获取价格	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK
MJD44	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44C	MCC	获取价格	Tape&Reel:2.5Kpcs/Reel;
MJD44E3	MOTOROLA	获取价格	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3	ONSEMI	获取价格	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA
MJD44E3-1	MOTOROLA	获取价格	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3T4	MOTOROLA	获取价格	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3T4	ONSEMI	获取价格	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA

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