5秒后页面跳转
MJD42C-TP PDF预览

MJD42C-TP

更新时间: 2024-11-06 14:53:43
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 367K
描述
Power Bipolar Transistor,

MJD42C-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
Base Number Matches:1

MJD42C-TP 数据手册

 浏览型号MJD42C-TP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MJD42C  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Electrically similar to popular TIP41 and TIP42 Series  
Monolithic Construction With Built-in Base-Emitter  
Resistors  
Silicon  
PNP epitaxial planer  
Transistors  
·
·
·
·
·
DPAK  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
J
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
-100  
-100  
-5  
Unit  
V
V
V
A
W
R
R
H
1
2
3
C
I
O
Collector Current-Continuous  
-6  
F
E
PC  
TJ  
Collector Dissipation  
Operating Junction Temperature  
1.25  
150  
TSTG  
Storage Temperature  
-65 to +150  
M
V
K
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-30mAdc, IB=0)  
Min  
Typ  
Max  
Units  
-100  
---  
---  
Vdc  
G
V(BR)CBO  
V(BR)EBO  
ICEO  
Collector-Base Breakdown Voltage  
(IC=-0.1mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-0.1mAdc, IC=0)  
Collector Cutoff Current  
(VCE=-60Vdc, IB=0)  
Emitter Cutoff Current  
-100  
-5  
---  
---  
---  
---  
Vdc  
Vdc  
Q
---  
---  
-50  
-500  
uAdc  
uAdc  
IEBO  
A
---  
---  
(VEB=-5Vdc, IC=0)  
L
D
B
PIN 1. BASE  
PIN 2. COLLECTOR  
PIN 3. EMITTER  
hFE  
DC Current Gain  
(IC=-0.3Adc, VCE=-4Vdc)  
(IC=-3Adc, VCE=-4Vdc)  
---  
---  
---  
75  
30  
15  
DIMENSIONS  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=-6Adc, IB=-0.6Adc)  
INCHES  
MAX  
MM  
---  
---  
-1.5  
Vdc  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
MIN  
MAX  
2.40  
0.13  
0.86  
0.58  
6.70  
5.46  
NOTE  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
2.20  
0.00  
0.66  
0.46  
6.50  
5.10  
VBE(on)  
Base-Emitter Voltage  
(IC=-6Adc, VCE=-4Vdc )  
---  
3
---  
---  
-2.0  
---  
Vdc  
Transition frequency  
(VCE=-10Vdc,IC=-0.5Adc,fT=1KHz)  
fT  
MHZ  
0.190  
4.83  
0.236  
0.086  
0.386  
0.244  
0.094  
0.409  
6.00  
2.18  
9.80  
6.20  
2.39  
10.40  
J
K
L
M
O
Q
V
0.114  
0.063  
0.043  
0.000  
2.90  
1.60  
0.055  
0.067  
1.40  
1.70  
0.051  
0.012  
1.10  
0.00  
1.30  
0.30  
0.211  
5.35  
www.mccsemi.com  
1 of 2  
Revision: A  
2014/05/22  

与MJD42C-TP相关器件

型号 品牌 获取价格 描述 数据表
MJD42R-HAF SWST

获取价格

功率三极管
MJD44 MOTOROLA

获取价格

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44 FAIRCHILD

获取价格

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK
MJD44 STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44C MCC

获取价格

Tape&Reel:2.5Kpcs/Reel;
MJD44E3 MOTOROLA

获取价格

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3 ONSEMI

获取价格

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA
MJD44E3-1 MOTOROLA

获取价格

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3T4 MOTOROLA

获取价格

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3T4 ONSEMI

获取价格

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA