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MJD42C-TP PDF预览

MJD42C-TP

更新时间: 2024-11-21 14:53:43
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 367K
描述
Power Bipolar Transistor,

MJD42C-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
Base Number Matches:1

MJD42C-TP 数据手册

 浏览型号MJD42C-TP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MJD42C  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Electrically similar to popular TIP41 and TIP42 Series  
Monolithic Construction With Built-in Base-Emitter  
Resistors  
Silicon  
PNP epitaxial planer  
Transistors  
·
·
·
·
·
DPAK  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
J
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
-100  
-100  
-5  
Unit  
V
V
V
A
W
R
R
H
1
2
3
C
I
O
Collector Current-Continuous  
-6  
F
E
PC  
TJ  
Collector Dissipation  
Operating Junction Temperature  
1.25  
150  
TSTG  
Storage Temperature  
-65 to +150  
M
V
K
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-30mAdc, IB=0)  
Min  
Typ  
Max  
Units  
-100  
---  
---  
Vdc  
G
V(BR)CBO  
V(BR)EBO  
ICEO  
Collector-Base Breakdown Voltage  
(IC=-0.1mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-0.1mAdc, IC=0)  
Collector Cutoff Current  
(VCE=-60Vdc, IB=0)  
Emitter Cutoff Current  
-100  
-5  
---  
---  
---  
---  
Vdc  
Vdc  
Q
---  
---  
-50  
-500  
uAdc  
uAdc  
IEBO  
A
---  
---  
(VEB=-5Vdc, IC=0)  
L
D
B
PIN 1. BASE  
PIN 2. COLLECTOR  
PIN 3. EMITTER  
hFE  
DC Current Gain  
(IC=-0.3Adc, VCE=-4Vdc)  
(IC=-3Adc, VCE=-4Vdc)  
---  
---  
---  
75  
30  
15  
DIMENSIONS  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=-6Adc, IB=-0.6Adc)  
INCHES  
MAX  
MM  
---  
---  
-1.5  
Vdc  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
MIN  
MAX  
2.40  
0.13  
0.86  
0.58  
6.70  
5.46  
NOTE  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
2.20  
0.00  
0.66  
0.46  
6.50  
5.10  
VBE(on)  
Base-Emitter Voltage  
(IC=-6Adc, VCE=-4Vdc )  
---  
3
---  
---  
-2.0  
---  
Vdc  
Transition frequency  
(VCE=-10Vdc,IC=-0.5Adc,fT=1KHz)  
fT  
MHZ  
0.190  
4.83  
0.236  
0.086  
0.386  
0.244  
0.094  
0.409  
6.00  
2.18  
9.80  
6.20  
2.39  
10.40  
J
K
L
M
O
Q
V
0.114  
0.063  
0.043  
0.000  
2.90  
1.60  
0.055  
0.067  
1.40  
1.70  
0.051  
0.012  
1.10  
0.00  
1.30  
0.30  
0.211  
5.35  
www.mccsemi.com  
1 of 2  
Revision: A  
2014/05/22  

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