Datasheet > MJD44H11

MJD44H11

更新时间： 2024-09-13 12:32:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	98K
描述
Lead Formed for Surface Mount Applications in Plastic Sleeves

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD44H11 数据手册

Product specification

MJD44H11

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Lead Formed for Surface Mount Applications in Plastic Sleeves

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Pb-Free Packages are Available

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Symbol

V^CEO

V^EB

Rating

Unit

Emitter-base voltage

Collector current

I^C

Collector current (pulse)

I^CP

Total Device Dissipation FR-5 Board

@T^A= 25

P^D

Derate above 25

0.16

Total Device Dissipation Alumina Substrate

@T^A= 25

P^D

1.75

Derate above 25

0.014

Junction temperature

T^j

150

-55 to +150

6.25

Storage temperature

T^stg

R^èJC

R^èJA

T^L

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Lead Temperature for Soldering

71.4

260

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与MJD44H11相关器件

型号	品牌	获取价格	描述	数据表
MJD44H11_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11_09	STMICROELECTRONICS	获取价格	Complementary power transistors
MJD44H11_09	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
MJD44H11_11	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-001	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11-001G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD44H11-1G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11A	NEXPERIA	获取价格	80 V, 8 A NPN high power bipolar transistorProduction