Datasheet > MJD44H11

MJD44H11

更新时间： 2024-09-14 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	379K
描述
80V,8A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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MJD44H11 数据手册

NPN Silicon Epitaxial Planar Transistor

MJD44H11

Features



Low collector-emitter saturation voltage

Fast switching speeds

Complement to MJD45H11

Mechanic al Data



Case: TO-252

TO-252

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

MJD44H11

80pcs / Tube or 2500pcs / Tape & Reel

MJD44H11

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CEO

V_EBO

I_C

Value

Unit

I_CM

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Thermal Resistance (Junction-to-Air)

Thermal Resistance (Junction-to-Case)

Junction Temperature

Symbol

P_D

Value

Unit

°C/W

°C

R_θJA

R_θJC

T_J

71.4

6.25

150

Storage Temperature Range

T_STG

-55 ~ +150

°C

STM0411A: May 2020

www.gmesemi.com

12 3 4

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