Datasheet > MJD44E3T4

MJD44E3T4

更新时间： 2024-10-31 22:15:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管开关
页数	文件大小	规格书
4页	84K
描述
NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

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MJD44E3T4 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.2
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	80 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MJD44E3T4 数据手册

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by MJD44E3/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN DARLINGTON

SILICON

POWER TRANSISTOR

10 AMPERES

80 VOLTS

DPAK For Surface Mount Application

. . . for general purpose power and switching output or driver stages in applications

such as switching regulators, converters, and power amplifiers.

•

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)

Electrically Similar to Popular D44E3 Device

High DC Gain — 1000 Min @ 5.0 Adc

Low Sat. Voltage — 1.5 V @ 5.0 Adc

20 WATTS

Compatible With Existing Automatic Pick & Place Equipment

CASE 369–07

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

Total Power Dissipation

CASE 369A–13

@ T = 25 C

Derate above 25 C

Watts

W/ C

0.16

Total Power Dissipation (1)

@ T = 25 C

Derate above 25 C

1.75

Watts

W/ C

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.014

T , T

–55 to +150

Operating and Storage Junction

Temperature Range

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

260

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient (1)

Lead Temperature for Soldering

θJC

θJA

(1) These ratings are applicable when surface mounted on the minimum pad size recommended.

inches

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁷r Power Device Data

12 3 4

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MJD44E3T4 替代型号

型号	品牌	替代类型	描述	数据表
MJD44E3T4G	ONSEMI	功能相似	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA
MJD44E3T4	ONSEMI	功能相似	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA

与MJD44E3T4相关器件

型号	品牌	获取价格	描述	数据表
MJD44E3T4G	ONSEMI	获取价格	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA
MJD44H11	FAIRCHILD	获取价格	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK
MJD44H11	KEXIN	获取价格	Complementary Power Transistors
MJD44H11	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD44H11	NEXPERIA	获取价格	80 V, 8 A NPN high power bipolar transistorProduction
MJD44H11	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD44H11	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11	YANGJIE	获取价格	TO-252
MJD44H11	BL Galaxy Electrical	获取价格	80V,8A,General Purpose NPN Bipolar Transistor

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