Datasheet > MJD42R-HAF

MJD42R-HAF

更新时间： 2024-11-22 14:54:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	838K
描述
功率三极管

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中文翻译

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数据手册

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MJD42R-HAF 数据手册

MJD42R-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

-I_CM

Base Current

-I_B

T_c= 25

1.75

Total Power Dissipation

T_a= 25

P_D

Operating Junction Temperature

Storage Temperature Range

T_j

- 65 to + 150

- 55 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

6.25

71.4

Unit

Thermal Resistance from Junction to Case

C/W

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 02/04/2022 Rev: 02

12 3 4 5

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