Datasheet > MJD32CT4(TO-251)

MJD32CT4(TO-251)

更新时间： 2024-11-18 21:04:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	168K
描述
Transistor

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MJD32CT4(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MJD32CT4(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/252-2L Plastic-Encapsulate Transistors

TO-251

TO-252-2L

MJD32C

TRANSISTOR (PNP)

FEATURES

1 2 3

1.BASE

Designed for general purpose amplifier and low speed switching applications.

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

2.COLLECTOR

3.EMITTER

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP31 and TIP32 Series

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

MAX

-100

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-3

P_C

1.25

150

℃

T_J

T_stg

-65-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Test

conditions

MIN

-100

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA, I_E=0

I_C= -30mA, I_B=0

I_E= -1mA, I_C=0

I_CES

I_CEO

-20

-50

-1

μA

V_CE=-100V, V_EB=0

V_CE= -60V, I_B= 0

V_EB=-5V, I_C=0

Collector cut-off current

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(on)

f_T

V_CE= -4V, I_C=-1A

V_CE=-4 V, I_C=-3A

I_C=-3A, I_B=-0.375A

V_CE= -4V, I_C=-3A

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

-1.2

-1.8

Transition frequency

V_CE=-10V , I_C=-0.5A,f_T=1KHz

MH_Z

* Pulse Test: PW≤300µs, Duty Cycle≤2%

12 3

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