Datasheet > MDD312

MDD312

更新时间： 2024-09-16 12:19:43

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
4页	260K
描述
High Power Diode Modules

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MDD312 数据手册

MDD 312

I_FRMS

I_FAVM

2x 520 A

2x 310 A

High Power

Diode Modules

V_RRM= 1200-2200 V

V_RSM

V_RRM

Type

1300

1500

1200

1400

MDD 312-12N1

MDD 312-14N1

1700

1900

2100

2300

1600

1800

2000

2200

MDD 312-16N1

MDD 312-18N1

MDD 312-20N1

MDD 312-22N1

E72873

Features

Symbol

Conditions

Maximum Ratings

• International standard package

• Direct Copper Bonded Al₂O₃ceramic

with copper base plate

• Planar passivated chips

• Isolation voltage 3600 V~

• UL registered

I_FRMS

I_FAVM

I_FSM

T_VJ= T_VJM

180° sine

T_C= 25°C

T_C= 100°C

520

310

T_VJ= 45°C; t = 10 ms (50 Hz)

V_R= 0

10500

11200

t = 8.3 ms (60 Hz)

T_VJ= T_VJM

;

t = 10 ms (50 Hz)

t = 8.3 ms (60 Hz)

9200

9800

V_R= 0

I²t

T_VJ= 45°C; t = 10 ms (50 Hz)

551 000

527 000

A²s

Applications

V_R= 0

t = 8.3 ms (60 Hz)

A²s

• Supplies for DC power equipment

• DC supply for PWM inverter

• Field supply for DC motors

• Battery DC power supplies

T_VJ= T_VJM

V_R= 0

;

t = 10 ms (50 Hz)

t = 8.3 ms (60 Hz)

423 000

403 000

A²s

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+125

°C

Advantages

• Simple mounting

• Improved temperature & power cycling

• Reduced protection circuits

V_ISOL

50/60 Hz, RMS t = 1 min

I_ISOL< 1 mA t = 1 s

3000

3600

M_d

Mounting torque (M6)

Terminal connection torque (M8)

4.5 - 7

11-13

Weight

Typical including screws

750

Symbol

I_RRM

Conditions

Characteristics Values

V_R= V_RRM

T_VJ= T_VJM

T_VJ= 25°C

V_F

I_F= 600 A;

1.32

V_T0

r_t

For power-loss calculations only

T_VJ= T_VJM

0.8

0.6

R_thJC

per diode; DC current

per module

per diode; DC current

per module

0.12 K/W

0.06 K/W

0.16 K/W

0.08 K/W

other values

see MCC 255

R_thJK

Q_S

I_RM

I_F= 400 A; -di/dt = 50 A/µs; T_VJ= 125°C

700

260

µC

d_S

d_A

Creeping distance on surface

Creepage distance in air

Maximum allowable acceleration

12.7

9.6

50 m/s²

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

20130813g

1 - 4

12 3 4

中文翻译

下载PDF

与MDD312相关器件

型号	品牌	获取价格	描述	数据表
MDD312-12IN1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1200V V(RRM),
MDD312-12IO1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1200V V(RRM),
MDD312-12N1	IXYS	获取价格	High Power Diode Modules
MDD312-12N1	LITTELFUSE	获取价格	双二极管模块产品组合提供多种封装，击穿电压高达2200V。
MDD312-14IN1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1400V V(RRM),
MDD312-14IO1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1400V V(RRM),
MDD312-14N1	IXYS	获取价格	High Power Diode Modules
MDD312-14N1	LITTELFUSE	获取价格	双二极管模块产品组合提供多种封装，击穿电压高达2200V。
MDD312-16IN1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1600V V(RRM),
MDD312-16IO1	LITTELFUSE	获取价格	Rectifier Diode, 320A, 1600V V(RRM),