Datasheet > MDD3400A

MDD3400A

更新时间： 2024-11-19 18:09:51

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
5页	6938K
描述
SOT-23-3

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中文翻译

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数据手册

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MDD3400A 数据手册

MDD3400A

30V N-Channel Enhancement Mode MOSFET

SOT-23-3

I_{D Max}

V_(BR)DSS

R_DS(on)Typ

1. Gate

@10V

27mΩ

5.8A

2. Source

3. Drain

30V

29mΩ 4.5V

Application

Features

High dense cell design for extremely low RDS(ON)

Load Switch for Portable Devices

^zDC/DC Converter

Exceptional on-resistance and maximum DC current capability

Marking

Equivalent Circuit

XXX:Date Code

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

I_D

±12

5.8

Pulsed Drain Current (Note 1)

I_DM

Power Dissipation(Note 2)

P_D

1.5

Thermal Resistance from Junction to Ambient(Note 2)

Junction Temperature and Storage Temperature

R_θJA

100

℃/W

℃

TJ,T_stg

-50 ~150

Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1 / 5

V 1.0

12 3 4 5

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