Datasheet > MDD3401

MDD3401

更新时间： 2024-11-07 18:08:55

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
5页	5786K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MDD3401 数据手册

MDD3401

-30V P-Channel Enhancement Mode MOSFET

SOT-23

I_{D Max}

V_(BR)DSS

R_DS(on)Typ

1. Gate

@-10V

45mΩ

-4.2A

2. Source

3. Drain

-30V

50mΩ 4.5V

Application

Features

High dense cell design for extremely low RDS(ON)

Load/Power Switching

Interfacing Switching

Exceptional on-resistance and maximum DC current capability

Equivalent Circuit

Marking

XXX:Date Code

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

-30

V_GS

I_D

±12

-4.2

Pulsed Drain Current (Note 1)

I_DM

-16

P_D

1.2

Power Dissipation(Note 2)

Thermal Resistance from Junction to Ambient(Note 2)

Junction Temperature and Storage Temperature

R_θJA

℃/W

℃

TJ,T_stg

-50 ~150

Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1 / 5

V 1.0

12 3 4 5

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