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MDD3752ARH PDF预览

MDD3752ARH

更新时间: 2024-11-19 01:23:07
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 897K
描述
P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

MDD3752ARH 数据手册

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MDD3752A  
P-Channel Trench MOSFET, -40V, -43A, 17mΩ  
Features  
General Description  
VDS = -40V  
ID = -43A @VGS = -10V  
RDS(ON)  
The MDD3752A uses advanced MagnaChip’s Trench  
MOSFET Technology to provided high performance in on-  
state resistance, switching performance and reliability.  
< 17mΩ @ VGS = -10V  
< 25mΩ @ VGS = -4.5V  
Low RDS(ON), Low Gate Charge can be offering superior  
benefit in the application.  
Applications  
Inverters  
General purpose applications  
G
S
Absolute Maximum Ratings (TC =25o)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
-40  
Unit  
V
Gate-Source Voltage  
VGSS  
±20  
V
TC=25oC  
TC=100oC  
43  
A
Continuous Drain Current  
Pulsed Drain Current  
Power Dissipation  
(Note 2)  
ID  
27  
A
IDM  
PD  
-90  
A
TC=25oC  
TC=100oC  
(Note 3)  
50  
W
20  
Single Pulse Avalanche Energy  
EAS  
128  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~+150  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
Rating  
40  
Unit  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1)  
oC/W  
RθJC  
2.5  
1
January 2014. Version 1.0  
MagnaChip Semiconductor Ltd.  

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