Datasheet > MDD3N40

MDD3N40

更新时间： 2024-11-06 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
7页	1055K
描述
N-Channel MOSFET 400V, 2.0A, 3.4(ohm)

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MDD3N40 数据手册

MDD3N40

N-Channel MOSFET 400V, 2.0A, 3.4Ω

General Description

Features

The MDD3N40 use advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 400V

 I_D= 2.0A

 R_DS(ON)≤ 3.4Ω

@V_GS= 10V

MDD3N40 are suitable device for SMPS and

general purpose applications.

Applications

 Power Supply

 PFC

 LED TV

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

400

±30

2.0

Unit

V_DSS

V_GSS

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

1.2

I_DM

P_D

8.0

T_C=25^oC

Derate above 25 ^oC

0.24

4.5

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Repetitive Pulse Avalanche Energy⁽⁴⁾

Avalanche current⁽¹⁾

dv/dt

E_AR

3.0

I_AR

2.0

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

110

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJc

4.1

Feb. 2014 Version 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7

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