Datasheet > MDD4N60

MDD4N60

更新时间： 2024-11-06 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
7页	770K
描述
N-Channel MOSFET 600V, 3.5A, 2.0ohm

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中文翻译

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数据手册

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MDD4N60 数据手册

ꢀ

ꢀ MDD4N60/MDI4N60ꢀ^ꢀ

ꢀ

ꢀ NꢁChannelꢀMOSFETꢀ600V,ꢀ3.5A,ꢀ2.0Ωꢀ

GeneralꢀDescriptionꢀ

Featuresꢀ

ꢀ

Theseꢀ Nꢁchannelꢀ MOSFETꢀ areꢀ producedꢀ usingꢀ advancedꢀ

MagnaChip’sꢀ MOSFETꢀ Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁ

stateꢀ resistance,ꢀ highꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ

ꢀꢀ

V_DSꢀ=ꢀ600Vꢀ

I_Dꢀ=ꢀ3.5Aꢀ ꢀ

R_DS(ON)ꢀ≤ꢀ2.0ꢂꢀ

@ꢀV_GSꢀ=ꢀ10Vꢀ

quality.ꢀ

ꢀ

Applicationsꢀ

ꢀ

Theseꢀ devicesꢀ areꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ

switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ

ꢀ

ꢀꢀ

PowerꢀSupplyꢀ

PFCꢀ

HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ

IꢁPAKꢀ

ꢀ GꢀDꢀSꢀ

(TOꢁ251)ꢀ

AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25^oC)ꢀ ꢀ

Characteristicsꢀ

Symbolꢀ

V_DSS

V_GSS

Ratingꢀ

600ꢀ

Unitꢀ

Vꢀ

DrainꢁSourceꢀVoltageꢀ

ꢀ

GateꢁSourceꢀVoltageꢀ

ꢀ

±30ꢀ

Vꢀ

ꢀ T_C=25^oCꢀ

3.5ꢀ

Aꢀ

ꢀ ContinuousꢀDrainꢀCurrentꢀ

I_Dꢀ

I_DM

P_Dꢀ

ꢀ T_C=100^oCꢀ

2.2ꢀ

Aꢀ

ꢀ PulsedꢀDrainꢀCurrent⁽¹⁾

ꢀ PowerꢀDissipationꢀ

ꢀ

14ꢀ

Aꢀ

ꢀ T_C=25^oCꢀ

67.5ꢀ

0.54ꢀ

6.75ꢀ

4.5ꢀ

Wꢀ

W/ ^oCꢀ

Derateꢀaboveꢀ25 ^oCꢀ

RepetitiveꢀAvalancheꢀEnergy⁽¹⁾ꢀ ꢀ

PeakꢀDiodeꢀRecoveryꢀdv/dt⁽³⁾

SingleꢀPulseꢀAvalancheꢀEnergy⁽⁴⁾

E_AR

dv/dtꢀ

E_AS

T_J,ꢀT_stg

ꢀ

mJꢀ

V/nsꢀ

mJꢀ

^oC

ꢀ

170ꢀ

ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ

*ꢀIdꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ

ꢀ

ꢁ55~150

ꢀ

ThermalꢀCharacteristicsꢀ

ꢀ

Characteristicsꢀ

Symbolꢀ

R_θJA

R_θJC

MDD4N60ꢀ/ꢀMDI4N60ꢀ

Unitꢀ

ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient⁽¹⁾

ThermalꢀResistance,ꢀJunctionꢁtoꢁCase⁽¹⁾

ꢀ ꢀ ꢀ ꢀ

ꢀ

110ꢀ

^oC/Wꢀ

ꢀ

1.85ꢀ

1ꢀ

Mar.ꢀ2010ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀtd.

12 3 4 5 6 7

中文翻译

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与MDD4N60相关器件

型号	品牌	获取价格	描述	数据表
MDD4N60RH	MGCHIP	获取价格	N-Channel MOSFET 600V, 3.5A, 2.0ohm
MDD500-12N1	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 560A, 1200V V(RRM), Silicon,
MDD500-14N1	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 560A, 1400V V(RRM), Silicon,
MDD500-16N1	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 560A, 1600V V(RRM), Silicon,
MDD500-20N1	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 560A, 2000V V(RRM), Silicon,
MDD500-22N1	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 560A, 2200V V(RRM), Silicon,
MDD56-04N1	LITTELFUSE	获取价格	Rectifier Diode, 71A, 400V V(RRM),
MDD56-04N1B	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 71A, 400V V(RRM), Silicon,
MDD56-06N1	LITTELFUSE	获取价格	Rectifier Diode, 71A, 600V V(RRM),
MDD56-06N1B	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 71A, 600V V(RRM), Silicon,

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