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MDD5N40 PDF预览

MDD5N40

更新时间: 2024-11-19 01:14:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
7页 871K
描述
N-Channel MOSFET 400V, 3.4 A, 1.6ohm

MDD5N40 数据手册

 浏览型号MDD5N40的Datasheet PDF文件第2页浏览型号MDD5N40的Datasheet PDF文件第3页浏览型号MDD5N40的Datasheet PDF文件第4页浏览型号MDD5N40的Datasheet PDF文件第5页浏览型号MDD5N40的Datasheet PDF文件第6页浏览型号MDD5N40的Datasheet PDF文件第7页 
                                                                                                                               
MDI5N40/MDD5N40  
NꢁChannelꢀMOSFETꢀ400V,ꢀ3.4ꢀA,ꢀ1.6  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
TheꢀMDI5N40ꢀ/ꢀMDD5N40ꢀuseꢀadvancedꢀ  
MagnachipsꢀMOSFETꢀTechnology,ꢀwhichꢀprovidesꢀ  
lowꢀonꢁstateꢀresistance,ꢀhighꢀswitchingꢀperformanceꢀ  
andꢀexcellentꢀquality.ꢀ  
ꢀVDSꢀ=ꢀ400Vꢀ  
ꢀIDꢀ=ꢀ3.4Aꢀ  
ꢀRDS(ON)≤ꢀ1.6ꢀ  
@VGSꢀ=ꢀ10Vꢀ  
@VGSꢀ=ꢀ10Vꢀ  
MDI5N40ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀandꢀ  
generalꢀpurposeꢀapplications.ꢀ  
Applicationsꢀ  
ꢀPowerꢀSupplyꢀ  
ꢀPFCꢀ  
ꢀBallastꢀ  
IꢁPAKꢀ  
(TOꢁ251)ꢀ  
ꢀ GꢀDꢀSꢀ  
G
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
Ratingꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
VDSS  
400ꢀ  
±30ꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
VGSS  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=100oCꢀ  
3.4ꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ  
IDꢀ  
2.15ꢀ  
13.6ꢀ  
45ꢀ  
Aꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
IDM  
Aꢀ  
ꢀ TC=25oCꢀ  
Derateꢀaboveꢀ25 oCꢀ  
Wꢀ  
PDꢀ  
W/ oCꢀ  
0.36ꢀ  
4.5ꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ RepetitiveꢀPulseꢀAvalancheꢀEnergy(4)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
Dv/dtꢀ  
V/nsꢀ  
mJꢀ  
mJꢀ  
oC  
EAR  
4.5ꢀ  
EAS  
170ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstg  
ꢁ55~150ꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
Ratingꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
RθJA  
110ꢀ  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
RθJC  
2.75ꢀ  
1
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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