Datasheet > MDD5N50FRH

MDD5N50FRH

更新时间： 2024-11-22 17:15:19

品牌	Logo	应用领域
美格纳 - MGCHIP		/
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6页	1207K
描述
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MDD5N50FRH 数据手册

MDD5N50F

N-Channel MOSFET 500V, 4.2 A, 1.55Ω

General Description

Features

The MDD5N50F uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 I_D= 4.2A

 R_DS(ON)≤ 1.5Ω @V_GS= 10V

@V_GS= 10V

MDD5N50F is suitable device for Power Supply,

PFC and general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

Absolute Maximum Ratings (T_a= 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

500

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

4.2

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

2.6

I_DM

P_D

16.8

T_C=25^oC

Derate above 25 ^oC

0.56

4.5

W/ ^oC

V/ns

^oC

Peak Diode Recovery dv/dt⁽³⁾

Dv/dt

E_AS

Single Pulse Avalanche Energy⁽⁴⁾

Junction and Storage Temperature Range

230

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

110

Unit

^oC/W

R_θJC

1.8

Aug.2021 Version 1.1

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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