Datasheet > MDD600-20N1

MDD600-20N1

更新时间： 2024-11-22 10:32:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
9页	347K
描述
Rectifier Diode, 1 Phase, 2 Element, 883A, 2000V V(RRM), Silicon, MODULE-3

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MDD600-20N1 数据手册

Date: 13.09.2004

IXYS

Data Sheet Issue: 2

Dual Diode Modules MD^#600

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MDA

MDK

MDD

1200

1400

1600

1800

2000

2200

600-12N1

600-14N1

600-16N1

600-18N1

600-20N1

600-22N1

600-12N1

600-14N1

600-16N1

600-18N1

600-20N1

600-22N1

600-12N1

600-14N1

600-16N1

600-18N1

600-20N1

600-22N1

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

1200-2200

1300-2300

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

I_F(RMS)

I_F(d.c.)

I_TSM

Maximum average forward current. T_case= 111°C ²⁾

Maximum average forward current. T_case= 85°C ²⁾

Maximum average forward current. T_case= 100°C ²⁾

Nominal RMS forward current. T_case= 55°C ²⁾

D.C. forward current. T_case= 55°C

600

883

726

1818

1158

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10 V ³⁾

21.8

A²s

I_TSM2

I²t

24.0

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

2.38×10⁶

2.88×10⁶

3500

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Isolation Voltage ⁴⁾

V_isol

T_{j op}

Operating temperature range

Maximum junction temperature

Storage temperature range

-40 to +125

+150

°C

T_{j max}

T_stg

-40 to +125

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 150°C T_jinitial.

4) AC RMS voltage, 50 Hz, 1min test.

Data Sheet. MD#600-12N1 to 22N1 Issue 2

Page 1 of 9

September, 2004

12 3 4 5 6 7...9

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