Datasheet > MDD710-26N1

MDD710-26N1

更新时间： 2024-09-16 05:31:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
9页	335K
描述
DIODE 1198 A, 2600 V, SILICON, RECTIFIER DIODE, Rectifier Diode

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MDD710-26N1 数据手册

Date: 2 May 2008

IXYS

Data Sheet Issue: 1

Dual Diode Modules MD#710-22N1-26N1

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MDA

MDK

MDD

2200

2400

2600

710-22N1

710-24N1

710-26N1

710-22N1

710-24N1

710-26N1

710-22N1

710-24N1

710-26N1

MAXIMUM

VOLTAGE RATINGS

UNITS

LIMITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

2200-2600

2300-2700

2200-2600

2300-2700

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

Maximum average on-state current, T_C= 85°C ²⁾

Maximum average on-state current. T_C= 100°C ²⁾

708

587

I_F(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

1440

I_F(d.c.)

I_FSM

I_FSM2

I²t

D.C. on-state current, T_C= 55°C

1198

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

12.7

A²s

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10V ³⁾

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

806 x 10³

980 x 10³

3000

I²t

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Isolation Voltage ⁴⁾

V_ISOL

T_{vj op}

T_stg

Operating temperature range

Storage temperature range

-40 to +150

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for Tv_jbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 150°C T_vjinitial.

4) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types MD#710-22N1 and MD#710-26N1 Issue 1

Page 1 of 9

May, 2008

12 3 4 5 6 7...9

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