5秒后页面跳转
MDD72-08N1B PDF预览

MDD72-08N1B

更新时间: 2024-11-17 21:54:55
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
3页 129K
描述
Diode Modules

MDD72-08N1B 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-240AA包装说明:R-XUFM-X3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.6 VJEDEC-95代码:TO-240AA
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:1700 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:99 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Rectifier Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD72-08N1B 数据手册

 浏览型号MDD72-08N1B的Datasheet PDF文件第2页浏览型号MDD72-08N1B的Datasheet PDF文件第3页 
MDD 72  
MDA 72  
IFRMS = 2x 180 A  
IFAVM = 2x 113 A  
Diode Modules  
VRRM = 800-1800 V  
3
3
1
1
2
3
TO-240 AA  
VRSM  
V
VRRM  
V
Type  
MDD  
2
2
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MDD 72-08N1 B MDA 72-08N1 B  
MDD 72-12N1 B  
---  
MDD 72-14N1 B MDA 72-14N1 B  
MDD 72-16N1 B MDA 72-16N1 B  
MDD 72-18N1 B  
---  
MDA  
Features  
Symbol  
Test Conditions  
Maximum Ratings  
International standard package  
JEDEC TO-240 AA  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered, E 72873  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 92°C; 180° sine  
TC = 100°C; 180° sine  
180  
113  
99  
A
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1700  
1950  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1540  
1800  
A
A
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
14 450  
15 700  
A2s  
Applications  
A2s  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
Battery DC power supplies  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11 850  
13 400  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Space and weight savings  
Simple mounting  
Improved temperature and power  
IISOL £ 1 mA  
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4/22-35 Nm/lb.in.  
2.5-4/22-35 Nm/lb.in.  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
90  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM; VR = VRRM  
15 mA  
VF  
IF = 300 A; TVJ = 25°C  
1.6  
0.8  
2.3 mW  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
QS  
IRM  
TVJ = 125°C; IF = 50 A, -di/dt = 3 A/ms  
170  
45  
mC  
A
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.35 K/W  
0.175 K/W  
0.55 K/W  
0.275 K/W  
other values  
see Fig. 6/7  
RthJK  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 3  

与MDD72-08N1B相关器件

型号 品牌 获取价格 描述 数据表
MDD72-12N1 LITTELFUSE

获取价格

Rectifier Diode, 99A, 1200V V(RRM),
MDD72-12N1B IXYS

获取价格

Diode Modules
MDD72-12N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD72-14N1 LITTELFUSE

获取价格

Rectifier Diode, 99A, 1400V V(RRM),
MDD72-14N1B IXYS

获取价格

Diode Modules
MDD72-14N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD72-16N1 LITTELFUSE

获取价格

Rectifier Diode, 99A, 1600V V(RRM),
MDD72-16N1B IXYS

获取价格

Diode Modules
MDD72-16N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD72-18N1B IXYS

获取价格

Diode Modules